PART |
Description |
Maker |
KM48S16030T-G_FH |
4M x 8Bit x 4 Banks Synchronous DRAM
|
Samsung semiconductor
|
K4S280832B-TL80 K4S280832B K4S280832B-TC10 K4S2808 |
4M x 8Bit x 4 Banks Sychronous DRAM 4米8位4银行Sychronous内存
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
K4S640832D K4S640832D-TC_L10 K4S640832D-TC_L1H K4S |
64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
|
SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
K4S560832D K4S560832D-TC_L1H K4S560832D-TC_L1L K4S |
256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
KM48S16030BT-G_FA KM48S16030BT-G_FH KM48S16030BT-G |
128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL
|
Samsung semiconductor
|
K4S510732C |
16M x 8Bit x 4 Banks Synchronous DRAM Data Sheet
|
Samsung Electronic
|
K4S280832D-TC_L1H K4S280832D-TC_L1L K4S280832D-TC_ |
RES, 0603, TF, 16.5R, 1%, 1/10W 128Mbit SDRAM (4M x 8Bit x 4 Banks Synchronous DRAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Electronic
|
MT46V32M16P-5BJ |
Double Data Rate (DDR) SDRAM MT46V128M4 ?32 Meg x 4 x 4 banks MT46V64M8 ?16 Meg x 8 x 4 banks MT46V32M16 ?8 Meg x 16 x 4 banks
|
Micron Technology
|
ADS7608A4A ADS7608A4A-5 ADS7608A4A-55 ADS7608A4A-6 |
Synchronous DRAM(4M X 8 Bit X 4 Banks) Synchronous DRAM(4M X 8 Bit X 4 Banks) 同步DRAM4米8位4银行 Synchronous DRAM(4M X 8 Bit X 4 Banks) 同步DRAM米8位4银行 133 Mhz LVTTL synchronous DRAM, 4 M x 8 bit x 4 banks
|
ADATA Technology Co., Ltd. A-DATA[A-Data Technology]
|
HY57V64820HG HY57V64820HGLT-5 HY57V64820HGLT-55 HY |
4 Banks x 2M x 8Bit Synchronous DRAM 8M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54 CAP 0.01UF 50V 5% X7R SMD-0805 TR-7 PLATED-NI/SN 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 CAP 1500PF 50V 10% X7R SMD-0603 T&R-7IN-PA NI-SN 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 100PF50V_5%_NPO_,SM0603 CSM, CER 100PF 50V 5% 060
|
Hynix Semiconductor, Inc. http:// Hynix Semiconductor Inc. HYNIX[Hynix Semiconductor]
|