PART |
Description |
Maker |
SST12LP15A-QVCE-K SST12LP15A SST12LP15A-QVCE |
2.4 GHz High-Power and High-Gain Power Amplifier
|
SST[Silicon Storage Technology, Inc]
|
SST12LP08 |
2.4 GHz High-Power, High-Gain Power Amplifier
|
Silicon Storage Technology, Inc
|
LD7215W |
6 GHz / 3 kW CW / PPM FOCUSING / HIGH POWER GAIN 6 GHz, 3 kW CW, PPM FOCUSING, HIGH POWER GAIN
|
NEC[NEC]
|
CGD1042HI |
1 GHz, 22 dB gain GaAs high output power doubler
|
NXP Semiconductors
|
LD7235 |
30 GHz, 150 W CW, CONDUCTION COOLING, HIGH POWER GAIN
|
NEC Corp. NEC[NEC]
|
LD7263 |
14 GHz / 750 W CW / CONDUCTION COOLING / HIGH POWER GAIN 14 GHz, 750 W CW, CONDUCTION COOLING, HIGH POWER GAIN
|
NEC Corp. NEC[NEC]
|
CGD1044HI |
1 GHz, 25 dB gain GaAs high output power doubler
|
NXP Semiconductors
|
5962-8978501YA 5962-8978501PC 5962-8978501YC 5962- |
5962-8978501YA · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers 5962-8978501PC · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers 5962-8978501YC · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers 5962-89785022A · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers 5962-8978501ZA · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers 5962-8978503KPC · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers 5962-8978503KYA · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers 5962-8978503KPA · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers 5962-8978503KZA · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers 5962-8978501PA · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers 5962-9800201KFC · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers 5962-8981001PA · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers 6N140A/883B · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers 8302401FC · Hermetically Sealed Low IF Wide Vcc High Gain Optocouplers
|
Agilent (Hewlett-Packard)
|
Q62702-F1129 BF998 |
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise/ gain-controlled input stages up to 1 GHz) Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84% Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz)
|
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
8485A 8485D Q8486D W8486A R8486A Q8486A R8486D E44 |
8485A Power Sensor, 50 MHz to 26.5 GHz 8485D Diode Power Sensor, 50 MHz to 26.5 GHz Q8486D Waveguide Power Sensor, 33 GHz to 50 GHz W8486A Waveguide Power Sensor, 75 GHz to 110 GHz R8486A Thermocouple Waveguide Power Sensor, 26.5 GHz to 40 GHz Q8486A Thermocouple Waveguide Power Sensor, 33 GHz to 50 GHz R8486D Waveguide Power Sensor, 26.5 GHz to 40 GHz E4412A Wide Dynamic Range Power Sensor, E-Series E4413A Wide Dynamic Range Power Sensor, E-Series V8486A V-band Power Sensor, 50 GHz to 75 GHz 8482B High-Power Sensor, 100 kHz to 4.2 GHz, 25W 8487A Power Sensor, 50 MHz to 50 GHz 8482H Power Sensor, 100 kHz to 4.2 GHz, 3 W 8481D Diode Power Sensor, 10 MHz to 18 GHz
|
Agilent (Hewlett-Packard)
|
HMMC-5620 |
6-20 GHz High-Gain Amplifier
|
Agilent (Hewlett-Packard) Agilent(Hewlett-Packard)
|