PART |
Description |
Maker |
GM71CS17403C GM71CS17403C-5 GM71CS17403C-6 GM71CS1 |
LED T5.5 24V12.5MA RED RoHS Compliant: Yes 4Mx4|5V|2K|5/6/7|FP/EDO DRAM - 16M 4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM
|
Hynix Semiconductor Inc.
|
M5M4V64S20ATP-12 M5M4V64S20ATP-8 |
64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM
|
Mitsubishi Electric Corporation
|
M5M4V64S30ATP-10 M5M4V64S20ATP-8A A98007_A M5M4V64 |
64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM From old datasheet system
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
GM76C8128CL-55 GM76C8128CLLI-55 GM76C8128CLL-85 GM |
131,072 words x 8 bit CMOS static RAM, 55ns 131,072 words x 8 bit CMOS static RAM, low power, 55ns 131,072 words x 8 bit CMOS static RAM, low power, 85ns 131,072 words x 8 bit CMOS static RAM, 70ns
|
LG Semiconductor
|
LC32464M-80 LC32464P |
256K (65536 words X 4 bits) DRAM Fast Page Mode
|
Sanyo Electric Co.,Ltd. Sanyo Semicon Device
|
28C64AT/P 28C64ATI/L 28C64AFTI/SO 28C64AFI/SO 28C6 |
64K (8K x 8) CMOS EEPROM The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一2 KB的EEPROM的国256位每字举办的串行CMOS The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS
|
Microchip Technology Inc. Microchip Technology, Inc.
|
CAT93C56JA CAT93C56JE CAT93C56JI CAT93C56KA CAT93C |
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国568位每字举办的串行CMOS The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一2 KB的EEPROM的国256位每字举办的串行CMOS The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS 2K-Bit Microwire Serial EEPROM
|
Samsung Semiconductor Co., Ltd. Macronix International Co., Ltd. HIROSE ELECTRIC Co., Ltd. Microchip Technology, Inc. Rohm Co., Ltd. Vicor, Corp. CATALYST[Catalyst Semiconductor] http://
|
K4C89323AF-GCFB K4C89323AF-TCF6 K4C89323AF-TCF5 K4 |
2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
LC321664BJ LC321664BM LC321664BT-70 LC321664BT-80 |
1 MEG (65536 words X 16 bits) DRAM Fast Page Mode, Byte Write
|
Sanyo Electric Co.,Ltd. SANYO[Sanyo Semicon Device]
|
MAX17605 MAX17601 MAX17603 MAX17600 MAX17602 CAT24 |
4A Sink /Source Current, 12ns, Dual MOSFET Drivers 2K/4K-Bit Serial EEPROM with Partial Array Write Protection 2K/4K-Bit偏串行EEPROM阵列写保 1K/2K/4K/8K/16K SPI Serial CMOS EEPROM 1K/2K/4K/8K/16K SPI 串行 互补型金属氧化物 电可擦可编程只读存储 The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国568位每字举办的串行CMOS 16K-Bit Microwire Serial EEPROM 16K的位微型导线串行EEPROM 64K 8K x 8 Battery-Voltage CMOS E2PROM 64K8K的8电池电压的CMOS E2PROM
|
Maxim Integrated Products Atmel, Corp. ON Semiconductor TE Connectivity, Ltd.
|
CAT93C56VE-1.8-GT3E CAT93C56ZD4E-1.8-GT2E CAT93C56 |
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一2 KB的EEPROM的国256位每字举办的串行CMOS
|
ON Semiconductor Emulation Technology, Inc. Electronic Theatre Controls, Inc. HIROSE ELECTRIC Co., Ltd. Xiamen Hongfa Electroacoustic Co., Ltd. ITT, Corp.
|
EDS2532JEBH-75-E |
256M bits SDRAM (8M words x 32 bits) 8M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90
|
Elpida Memory, Inc.
|