| PART |
Description |
Maker |
| CY7C1380C-200AC CY7C1380C-200BGC CY7C1380C-167AC C |
Memory : Sync SRAMs
PUSHBUTTON, METAL, FLAT, 22MM 5A; Switch function type:NC/NO Mom; Voltage, contact AC max:250V; Temp, op. max:55(degree C); Temp, op. min:-20(degree C); Diameter, panel cut-out:22.2mm; Length / Height, external:32mm; Dielectric RoHS Compliant: Yes
18-Mb (512K x 36/1M x 18) Pipelined SRAM 1M X 18 CACHE SRAM, 2.8 ns, PBGA165
18-Mb (512K x 36/1M x 18) Pipelined SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA165
18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 2.8 ns, PBGA165
18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 3 ns, PQFP100
18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 2.8 ns, PQFP100
18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 3.4 ns, PQFP100
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| CY7C1461AV33-100AXC CY7C1463AV33-100AXC CY7C1461AV |
36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL垄芒 Architecture
36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL Architecture(带NoBL结构6-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM) 36兆位米x 36 / 2 M中的x 18/512K × 72）流体系结构，通过与总线延迟（带总线延迟结构的的36 - Mbit通过的SRAM100万x 36 / 2 M中的x 18/512K × 72）流的SRAM
|
Cypress Semiconductor Corp.
|
| 79LV0408XPFK-20 79LV0408XPFI-20 79LV0408XPFH-20 79 |
Low Voltage 4 Megabit (512k x 8-bit) EEPROM 512K X 8 EEPROM 3V, 250 ns, PDFP40
Low Voltage 4 Megabit (512k x 8-bit) EEPROM 512K X 8 EEPROM 3V, 200 ns, PDFP40
IC LOGIC 3245 OCTAL FET BUS SWITCH -40 85C QSOP-20 55/TUBE 512K X 8 EEPROM 3V, 250 ns, PDFP40
|
Maxwell Technologies, Inc
|
| CAT25C65SA-1.8TE13 CAT25C65SA-TE13 CAT25C65SE-1.8T |
32K/64K-Bit SPI Serial CMOS EEPROM 32K/64K-Bit SPI串行EEPROM中的CMOS
Light Pipe; Mounting Hole Dia:3.5mm; Material:Polycarbonate; Length:10.2mm; Color:Clear; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes
LIGHT PIPE VERTICAL .350 ROUND
Light Pipe; Mounting Hole Dia:3.5mm; Material:Polycarbonate; Length:7.6mm; Color:Clear; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes
|
MITSUMI ELECTRIC CO., LTD.
Panasonic Industrial Solutions
CATALYST[Catalyst Semiconductor]
|
| U86-D2427-10421 U86-D4427-10421 U86-D6427-10421 U8 |
2XN SFP EXPRESSPORT垄芒 COMBO WITH LIGHT PIPE (ELASTOMERIC GASKET)
2XN SFP EXPRESSPORT COMBO WITH LIGHT PIPE (ELASTOMERIC GASKET)
|
Amphenol Corporation
|
| AT49F8192 AT49F8192- AT49F8192T-90TI AT49F8192-12R |
8-Megabit 512K x 16 5-volt Only CMOS Flash Memory 512K X 16 FLASH 5V PROM, 90 ns, PDSO48
8-Megabit 512K x 16 5-volt Only CMOS Flash Memory 512K X 16 FLASH 5V PROM, 90 ns, PDSO44
Quadruple 2-Input Positive-NAND Gate 14-TSSOP -40 to 125
|
Atmel, Corp.
Atmel Corp.
ATMEL[ATMEL Corporation]
|
| IDT71V424L IDT71V424S10PH IDT71V424S10PHG IDT71V42 |
3.3V CMOS STATIC RAM 4 MEG (512K x 8-BIT) 512K X 8 STANDARD SRAM, 15 ns, PDSO44
TRANS NPN W/RES 60 HFE NS-B1 512K X 8 STANDARD SRAM, 10 ns, PDSO36
TRANS NPN W/RES 80 HFE NS-B1
3.3V 512K x 8 Static RAM Center Pwr & Gnd Pinout
|
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
|
| CY62148ELL-55SXA |
4-Mbit (512K x 8) Static RAM 512K X 8 STANDARD SRAM, 55 ns, PDSO32
|
Cypress Semiconductor, Corp.
|
| TC554001FTL-85L TC554001FL-10L TC554001FTL-10L |
512K word x 8 Static RAM(512K x 8 静RAM) 12k字8静态存储器（为512k字8静态RAM）的
|
Toshiba Corporation
Toshiba, Corp.
|
| IS61VF51218A-6.5B3 |
256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM 512K X 18 CACHE SRAM, 6.5 ns, PBGA165
|
Integrated Silicon Solution, Inc.
|
| T2235 T2232 T2231 |
Pipe cutters
|
List of Unclassifed Manufacturers
|
| KL-07LS |
LIGHT PIPE
|
KINGBRIGHT[Kingbright Corporation]
|
