| PART |
Description |
Maker |
| IPB80N06S3L-06 IPI80N06S3L-06 IPP80N06S3L-06 SP000 |
OptiMOST Power-Transistor ㈢的OptiMOS - T的功率晶体管
OptiMOS㈢-T Power-Transistor
OptiMOS?-T Power-Transistor
|
Infineon Technologies AG
|
| IPB80N04S2-04 IPI80N04S2-04 SP0002-18154 SP0002-19 |
80 A, 40 V, 0.0037 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB GREEN, PLASTIC, TO-220, 3 PIN
OptiMOS? Power-Transistor
OptiMOS㈢ Power-Transistor
OptiMOSPower-Transistor
|
INFINEON[Infineon Technologies AG]
|
| 2SA20881 2SB11321 2SB11841 2SB1198K1 2SB12601 2SB1 |
Medium power transistor (?60V, ?0.5A)
Medium Power Transistor (?32V,?1A)
Power Transistor (?60V, ?3A)
Low-frequency Transistor (-80V, -0.5A)
Power Transistor (?80V, ?1A)
Low VCE(sat) Transistor (?20V, ?3A)
Power transistor (?20V, ?2A)
General purpose amplification (?30V, ?1A)
Low frequency amplifier
Medium power transistor (−60V, −0.5A)
|
ROHM[Rohm]
|
| MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MR |
COMPLEMENTARY SILICON POWER TRANSISTORS
COMPLEMETARY SILICON POWER TRANSISTORS
SILICON NPN TRANSISTOR
HIGH VOLTAGE PNP POWER TRANSISTOR
SILICON NPN POWER DARLINGTON TRANSISTOR
RF Power Field Effect Transistors
880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs
RF LDMOS Wideband Integrated Power Amplifiers
GENERAL PURPOSE L TO X-BAND GaAs MESFET
10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
FREESCALE
NEC
STMICROELECTRONICS[STMicroelectronics]
|
| CEN-U01BA CEN-U51BA CEN-U95 2N6548 2N6549 2N6552 2 |
Leaded Power Transistor Darlington
Leaded Power Transistor General Purpose
Power Transistors POWER TRANSISTOR, TO-202
Power Transistors 2 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-202
Power Transistors 2 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-202
Power Transistors 2 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-202
Power Transistors 2 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-202
Power Transistors 2 A, 40 V, NPN, Si, POWER TRANSISTOR, TO-202
|
http://
CENTRAL[Central Semiconductor Corp]
Central Semiconductor Corp.
Central Semiconductor, Corp.
|
| UPA1478 UPA1478H UPA1478H-AZ |
2 A, 35 V, 4 CHANNEL, NPN, Si, POWER TRANSISTOR SIP-10
NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE
|
Micrel Semiconductor, Inc.
NEC[NEC]
|
| 1DI300ZN-120 |
power transistor module
Low-Power, 1% Accurate, Dual-/Triple-/Quad-Level Battery Monitors in Small TDFN and TQFN Packages
300 A, 1200 V, NPN, Si, POWER TRANSISTOR
|
Fuji Electric
List of Unclassifed Manufacturers
ETC
|
| MP4305 |
Power Transistor Module Silicon PNP Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
TOSHIBA Power Transistor Module Silicon PNP Epitaxial Type (Darlington power transistor 4 in 1)
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
|
|
