| PART |
Description |
Maker |
| UPD4416008 UPD4416008G5-A15-9JF UPD4416008G5-A17-9 |
2M X 8 STANDARD SRAM, 17 ns, PDSO54 0.400 INCH, PLASTIC, TSOP2-54
16M-BIT CMOS FAST SRAM 2M-WORD BY 8-BIT
|
NEC
|
| IDT6116LA IDT6116SA IDT6116SA20TDB IDT6116SA20SO I |
From old datasheet system
2K X 8 STANDARD SRAM, 35 ns, PDSO24 0.300 INCH, SOJ-24
CMOS STATIC RAM 16K (2K x 8 BIT) 2K X 8 STANDARD SRAM, 45 ns, PDSO24
2K X 8 STANDARD SRAM, 35 ns, PDSO24 0.300 INCH, SOIC-24
CMOS STATIC RAM 16K (2K x 8 BIT) 2K X 8 STANDARD SRAM, 35 ns, PDSO24
CMOS STATIC RAM 16K (2K x 8 BIT) 2K X 8 STANDARD SRAM, 45 ns, PDIP24
CMOS STATIC RAM 16K (2K x 8 BIT) 2K X 8 STANDARD SRAM, 25 ns, PDIP24
CMOS STATIC RAM 16K (2K x 8 BIT) 2K X 8 STANDARD SRAM, 20 ns, PDIP24
|
http://
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
|
| HY62SF1640 HY62SF16403A HY62SF16403A-I HY62SF16403 |
256Kx16bit full CMOS SRAM
High speed, super low power and 4M bit full CMOS SRAM organized as 256K words by 16bits
|
Hynix Semiconductor
|
| M6MGB_T166S2BWG M6MGB M6MGT166S2BWG E99007_A |
16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY &
CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-CSP
From old datasheet system
|
Mitsubishi
|
| M5M51008BKR-10L M5M51008BKR-10LL M5M51008BKR-55L M |
128K X 8 STANDARD SRAM, 100 ns, PDSO32
1048576-bit (131072-word by 8-bit) CMOS static SRAM
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM 1048576位（131072 - Word位）的CMOS静态RAM
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM 1048576位（131072 - Word位）的CMOS静RAM
128K X 8 STANDARD SRAM, 70 ns, PDSO32
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric, Corp.
|
| MB84256A-70P-SK MB84256A-10P-SK MB84256A-70PFTN MB |
CMOS 256K bit Low Power SRAM
CMOS 256 KBit Low Power SRAM
CMOS 256K-BIT LOW POWER SRAM
|
Fujitsu Component Limited.
|
| IDT71T016SA15BFI IDT71T016SA10PH IDT71T016SA10PHI |
2.5V CMOS Static RAM 1 Meg (64K x 16-Bit) 64K X 16 STANDARD SRAM, 10 ns, PDSO44
2.5V CMOS Static RAM 1 Meg (64K x 16-Bit) .5V的CMOS静态RAM 1梅格4K的x 16位）
P-Channel NexFET Power MOSFET 6-SON -55 to 150 64K X 16 STANDARD SRAM, 12 ns, PBGA48
|
Integrated Device Technology, Inc.
|
| HM6264 HM6264B HM6264BLFP-10 HM6264BLFP-10LT HM626 |
Low Power SRAMs
IC,SRAM,8KX8,CMOS,DIP,28PIN,PLASTIC
64 k SRAM (8-kword x 8-bit)
Data Selectors/Multiplexers 20-LCCC -55 to 125
|
HITACHI[Hitachi Semiconductor]
Hitachi,Ltd.
|
| IDT6167 IDT6167LA IDT6167LA100D IDT6167LA100DB IDT |
CMOS STATIC RAM 16K (16K x 1-BIT) 16K的的CMOS静态RAM6K的1位）
CABLE SMA/BNC 24 RG-142 16K的的CMOS静态RAM6K的1位）
Quad Enhanced JFET Precision Operational Amplifier 14-SOIC -40 to 85 16K的的CMOS静态RAM6K的1位）
Enhanced-JFET Precision Dual Operational Amplifier 8-PDIP -40 to 85 16K的的CMOS静态RAM6K的1位）
CMOS STATIC RAM 16K (16K x 1-BIT) 16K X 1 STANDARD SRAM, 25 ns, PDSO20
CMOS STATIC RAM 16K (16K x 1-BIT) 16K X 1 STANDARD SRAM, 25 ns, CDIP20
CMOS STATIC RAM 16K (16K x 1-BIT) 16K X 1 STANDARD SRAM, 35 ns, CDIP20
CMOS STATIC RAM 16K (16K x 1-BIT) 16K X 1 STANDARD SRAM, 15 ns, CDIP20
CMOS STATIC RAM 16K (16K x 1-BIT) 16K X 1 STANDARD SRAM, 35 ns, PDIP20
CMOS STATIC RAM 16K (16K x 1-BIT) 16K X 1 STANDARD SRAM, 15 ns, PDIP20
CMOS STATIC RAM 16K (16K x 1-BIT) 16K X 1 STANDARD SRAM, 45 ns, CDIP20
CABLE SMA/BNC 36 RG-142
Enhanced-JFET Precision Dual Operational Amplifier 8-SOIC 0 to 70
Quad Enhanced JFET Precision Operational Amplifier 14-SOIC 0 to 70
16K X 1 STANDARD SRAM, 70 ns, PDSO20
|
Integrated Device Techn...
INTEGRATED DEVICE TECHNOLOGY INC
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
|
