| PART |
Description |
Maker |
| HYS64D16000GDL-8-B HYS64D16000GDL-6-B HYS64D16000G |
DDR SDRAM Modules - 256MB (32Mx64) PC3200 2-bank
DDR SDRAM Modules - 128MB (16Mx64) PC2700 1-bank
DDR SDRAM Modules - 128MB (16Mx64) PC2100 1-bank
DDR SDRAM Modules - 256MB (32Mx64) PC2100 2-bank
200-Pin Small Outline Dual-In-Line Memory Modules
|
INFINEON[Infineon Technologies AG]
|
| WED3DG6435V-D1 WED3DG6435V-JD1 WED3DG6435V10JD1 WE |
256MB - 32Mx64 SDRAM UNBUFFERED
|
WEDC[White Electronic Designs Corporation]
|
| W3EG6432S-D3 W3EG6432S335D3 W3EG6432S403JD3 W3EG64 |
256MB - 32Mx64 DDR SDRAM UNBUFFERED
|
WEDC[White Electronic Designs Corporation]
|
| W3EG6432S265D3 |
256MB - 32Mx64 DDR SDRAM UNBUFFERED
|
White Electronic Designs Corporation
|
| NT256D64S88A0G NT256D64S88A0G-7K NT256D64S88A0G-75 |
256Mb: 32Mx64 unbuffered DDR SDRAM module based 32x8 SDRAM
184pin One Bank Unbuffered DDR SDRAM MODULE 一位银行无缓冲184pin DDR SDRAM内存模块
|
NANYA
ETC
Electronic Theatre Controls, Inc.
|
| NT256D64S88A2GM NT256D64S88A2GM-7K NT256D64S88A2GM |
256Mb: 32Mx64 unbuffered DDR SO-DIMM module based 32Mx8 SDRAM
200pin One Bank Unbuffered DDR SO-DIMM 200pin一个银行缓冲的DDR SO - DIMM插槽
|
NANYA
ETC
Electronic Theatre Controls, Inc.
|
| HYS64T64000GU-3.7-A HYS64T64000GU-5-A HYS64T128020 |
DDR2 SDRAM Modules - 512MB (64Mx64) PC2 4300 4-4-4 1Bank; available 2Q/04
DDR2 SDRAM Modules - 512MB (64Mx64) PC2 3200 3-3-3 1Bank; available 2Q/04
DDR2 SDRAM Modules - 1GB (128Mx64) PC2 4300 4-4-4 2Bank; available 2Q/04
DDR2 SDRAM Modules - 256MB (32Mx64) PC2 4300 4-4-4 1Bank; available 2Q/04
DDR2 SDRAM Modules - 1GB (128Mx72) PC2 4300 4-4-4; 2Bank; available 2Q/04
DDR2 SDRAM Modules - 512MB (64Mx72) PC2 4300 4-4-4 1Bank; available 2Q/04
DDR2 SDRAM Modules - 256MB (32Mx64) PC2 3200 3-3-3 1Bank; available 2Q/04
DDR2 SDRAM Modules - 1GB (128Mx64) PC2 3200 3-3-3 2Bank; available 2Q/04
DDR2 SDRAM Modules - 512MB (64Mx72) PC2 3200 3-3-3 1Bank; available 2Q/04
DDR2 SDRAM Modules - 1GB (128Mx72) PC2 3200 3-3-3 2Bank; available 2Q/04
|
Infineon
|
| KBE00G003M-D411 KBE00G003M-D4110 |
NAND 512Mb*2 Mobile SDRAM 256Mb*2 NAND闪存12Mb * 2移动SDRAM 256Mb 2
SPECIALTY MEMORY CIRCUIT, PBGA107
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K5D5657ACM-F015 |
256Mb NAND and 256Mb Mobile SDRAM 256Mb的NAND闪存56Mb移动SDRAM
|
Samsung Semiconductor Co., Ltd.
|
| K5D5657DCM-F015 K5D5657DCM-F0CL |
MCP Specification of 256Mb NAND and 256Mb Mobile SDRAM
MCP / 256Mb NAND and 256Mb Mobile SDRAM
|
SAMSUNG[Samsung semiconductor]
Samsung Electronics
|
| HYB25D256400BC-6 HYB25D256400BC-7 HYB25D256400BT-7 |
DDR SDRAM Components - 256Mb (64Mx4) FBGA DDR333 (2.5-3-3)
DDR SDRAM Components - 256Mb (64Mx4) FBGA DDR266A (2-3-3)
DDR SDRAM Components - 256Mbit (64Mx4) DDR266A (2-3-3)
DDR SDRAM Components - 256Mb (16Mx16) FBGA DDR333 (2.5-3-3)
DDR SDRAM Components - 256Mb (16Mx16) FBGA DDR266A (2-3-3)
DDR SDRAM Components - 256Mbit (16Mx16) DDR333 (2.5-3-3)
DDR SDRAM Components - 256Mbit (16Mx16) DDR266A (2-3-3)
DDR SDRAM Components - 256Mb (32Mx8) FBGA DDR333 (2.5-3-3)
DDR SDRAM Components - 256Mbit (32Mx8) DDR333 (2.5-3-3)
DDR SDRAM Components - 256Mb (32Mx8) FBGA DDR266A (2-3-3)
DDR SDRAM Components - 256Mb (62Mx4) DDR266 (2-2-2)
|
Infineon
|
| HYMP564S648-E3 HYMP564S648-C4 HYMP532S646-E3 HYMP5 |
200pin Unbuffered DDR2 SDRAM SO-DIMMs based on 512 Mb 1st ver.
DDR2 SDRAM - SO DIMM 256MB
DDR2 SDRAM - SO DIMM 512MB
DDR2 SDRAM - SO DIMM 1GB
|
HYNIX[Hynix Semiconductor]
|
