| PART |
Description |
Maker |
| D44H10 D45H11 D44H8 D45H8 D44H D45H10 D44H11 ON027 |
10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 80 VOLTS
Card Edge Connector; No. of Contacts:24; Pitch Spacing:0.156"; Contact Termination:Solder; Leaded Process Compatible:Yes; Mounting Hole Dia:0.128" RoHS Compliant: Yes 10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB
COMPLEMENTARY SILICON POWER TRANSISTORS 10 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220AB
10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60/ 80 VOLTS
10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 80 VOLTS
From old datasheet system
|
Motorola Inc
ONSEMI[ON Semiconductor]
MOTOROLA[Motorola Inc]
http://
|
| MJF31C MJF32C MJF31C-D |
Complementary Silicon Plastic Power Transistors for Isolated Package Applications
3.0 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS 28 WATTS
|
ONSEMI[ON Semiconductor]
|
| TWT4805-15BI TWT1205-15BI TWT4805-15BZ TWT2405-15B |
COMPLEMENTARY SILICON POWER TRANSISTORS
High power NPN silicon transistor
Silicon NPN switching transistor
Silicon NPN transistor
PNP power transistor
Small signal NPN transistor
Medium power NPN silicon transistor
Dual npn-pnp complementary bipolar transistor
Complementary power transistors
NPN power transistors 模拟IC
Analog IC 模拟IC
|
RECOM Electronic GmbH
Vishay Intertechnology, Inc.
|
| MJH11018 MJH11019 MJH11020 MJH11021 MJH11022 MJH11 |
From old datasheet system
15 AMPERE DARLINGTON COMPLEMENTARY SILICON
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
|
ONSEMI[ON Semiconductor]
|
| 2N5883G 2N5884 2N5884G 2N5885G 2N5886G 2N5883 2N58 |
Complementary Silicon High−Power Transistors 25 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-204AA
Complementary Silicon High−Power Transistors
|
Rectron Semiconductor
ONSEMI[ON Semiconductor]
|
| MJ2955 2N3055 4079 |
COMPLEMENTARY SILICON POWER TRANSISTORS
From old datasheet system
COMPLEMENTARY SILICON POWER TRANSISTORS
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| NTE262 NTE261 |
Silicon complementary PNP transistor. Darlington power amplifier.
Silicon Complementary Transistors Darlington Power Amplifier
|
NTE[NTE Electronics]
|
| 2M5991 2N5989 |
12 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 40,60,80 VOLTS 100 WATTS 12安培功率晶体管互补性的芯片40,60,8000
12 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 40/60/80 VOLTS 100 WATTS
12 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 40 /60 /80 VOLTS 100 WATTS
12 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 406080 VOLTS 100 WATTS
|
Motorola Mobility Holdings, Inc.
Motorola Inc
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| MJ4032 MJ4035 4161 |
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
From old datasheet system
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| 2N6491G 2N6490 2N6490G 2N6488G |
15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60?0 VOLTS, 75 WATTS
Complementary Silicon Plastic Power Transistors 60?0 VOLTS, 75 WATTS
Complementary Silicon Plastic Power Transistors 60?0 VOLTS, 75 WATTS
|
ON Semiconductor
|
| NTHD3100C NTHD3100CT1 NTHD3100CT1G NTHD3100CT3 NTH |
Power MOSFET Complementary, 20 V, 3.9 A/-4.4 A ChipFET™
Power MOSFET Complementary, 20 V, 3.9 A/-4.4 A ChipFET™; Package: ChipFET™; No of Pins: 8; Container: Tape and Reel; Qty per Container: 3000 2.9 A, 20 V, 0.08 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
Power MOSFET 20V, 3.9A/4.4A, Complementary ChipFET(20V, 3.9A/4.4A功率MOSFET)
Power MOSFET 20 V, 3.9 A /−4.4 A, Complementary ChipFET
|
ON Semiconductor
|
| 2SA886 2SA0886 |
Power Device - Power Transistors - Others
Silicon PNP epitaxial planar type (For low-frequency power amplification Complementary)
|
PANASONIC[Panasonic Semiconductor]
|
