| PART |
Description |
Maker |
| K6F2008U2E-YF70 DS_K6F2008U2E K6F2008U2E-EF55 K6F2 |
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM 256Kx8位超低功耗和低电压的CMOS静态RAM
256K X 8 STANDARD SRAM, 55 ns, PBGA36
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| BS62LV2006TI BS62LV2006TIG55 BS62LV2006TIG70 BS62L |
Very Low Power/Voltage CMOS SRAM 256K X 8 bit 非常低功电压CMOS SRAM56K × 8
Asynchronous 2M(256Kx8) bits Static RAM
|
BRILLIANCE SEMICONDUCTOR, INC.
ETC
BSI[Brilliance Semiconductor]
|
| BS62LV2016SI BS62LV2009 BS62LV2009DC BS62LV2009DC- |
Asynchronous 2M(256Kx8) bits Static RAM
Very Low Power/Voltage CMOS SRAM 256K X 8 bit 非常低功电压CMOS SRAM56K × 8
|
BSI[Brilliance Semiconductor]
BRILLIANCE SEMICONDUCTOR, INC.
|
| EDI88257C EDI88257C/LP-C EDI88256C70CC EDI88256C70 |
70ns; 5V power supply; 256K x 18 monolithic SRAM
60MHz Rail-to-Rail Input-Output Op Amps; Temperature Range: -40°C to 85°C; Package: 8-HMSOP T&R
256Kx8 Monolithic SRAM(256Kx8 CMOS单片静态RAM（存取时0500ns
|
White Electronic Designs Corporation
|
| FMP1617DCX |
1M x 16 bit Super Low Power and Low Voltage Full CMOS RAM
|
FIDELIX
|
| FMP1617CCX |
1M x 16 bit Super Low Power and Low Voltage Full CMOS RAM
|
FIDELIX
|
| FMP3216DAX |
2M x 16 bit Super Low Power and Low Voltage Full CMOS RAM
|
FIDELIX
|
| CMP0817BA0-F70I CMP0817BA0-I |
512K x 16 bit Super Low Power and Low Voltage Full CMOS RAM
|
FIDELIX
|
| CMP0417AA8-F70I CMP0417AA8-I |
256K x 16 bit Super Low Power and Low Voltage Full CMOS RAM
|
FIDELIX
|
| EM610FV8S |
128K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic Solutions
|
| DSK6F3216T6M K6F3216T6M K6F3216T6M-F DS_K6F3216T6M |
2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| EM620FU16 |
128K x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic Solutions
|
