| PART |
Description |
Maker |
| K9K2G08U0M-FIB0 K9K2G08U0M-VCB0 K9K2G08U0M-VIB0 K9 |
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory 256M × 8 128M的16位NAND闪存
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K9K2G0816QU0M |
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Data Sheet
|
Samsung Electronic
|
| K9W4G08U1M K9K2G16U0M K9W4G16U1M K9K2G08Q0M K9K2G0 |
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K9F1G08R0A K9K2G08U1A K9F1G08U0A |
128M x 8 Bit / 256M x 8 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| MC-4R256FKE8S-845 MC-4R256FKE8S |
Direct Rambus DRAM SO-RIMM Module 256M-BYTE (128M-WORD x 18-BIT)
|
Elpida Memory, Inc.
ELPIDA[Elpida Memory]
|
| UPD23C128040BLGY-XXX-MJH UPD23C128080BLGY-XXX-MJH |
128M-bit (16M-wordx8-bit/8M-wordx16-bit) Mask ROM
|
NEC
|
| HM5425161BTT-10 HM5425401BTT-10 HM5425801BTT-10 HM |
256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 16-bit 4-bank/8-Mword 8-bit 4-bank/ 16-Mword 4-bit 4-bank 16M X 16 DDR DRAM, 0.75 ns, PDSO66
256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 16-bit 4-bank/8-Mword 8-bit 4-bank/ 16-Mword 4-bit 4-bank 64M X 4 DDR DRAM, 0.75 ns, PDSO66
256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 16-bit 4-bank/8-Mword 8-bit 4-bank/ 16-Mword 4-bit 4-bank 256M SSTL_2 DDR SDRAM的接43 MHz/133 MHz/125 MHz/100 MHz Mword6位-bank/8-Mword位银行/ 16 Mword位 -银行
256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword × 16-bit × 4-bank/8-Mword × 8-bit × 4-bank/ 16-Mword × 4-bit × 4-bank
|
Elpida Memory, Inc.
|
| UPD46128512-E10X UPD46128512-E11X UPD46128512-E12X |
128M-BIT CMOS MOBILE SPECIFIED RAM 8M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION
|
NEC
|
| HM5212325F HM5212325F-B60 HM5212325FBP-B60 |
128M LVTTL interface SDRAM 100MHz, 1-Mword x 32-bit x 4-bank
128M LVTTL interface SDRAM 100 MHz 1-Mword x 32-bit x 4-bank PC/100 SDRAM
INFRARED LIGHT EMITTING DIODE
LED ORANGE J-TYPE SMD TAPE/REEL 128M的LVTTL接口SDRAM00兆赫1 - Mword × 32位4个银行PC/100 SDRAM
|
HITACHI[Hitachi Semiconductor]
Hitachi,Ltd.
|
| UPD23C128040BL UPD23C128040BLGX UPD23C128040BLGX-X |
128M-BIT MASK-PROGRAMMABLE ROM 16M-WORD BY 8-BIT (BYTE MODE) / 8M-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE
|
NEC
|
| HYB25DC256160C |
(HYB25DC256160C / HYB25DC256800C) 256M-Bit DDR SDRAM
|
Infineon Technologies Corporation
|
