| PART |
Description |
Maker |
| AF239 Q60106-X239 |
PNP GERMANIUM RF TRANSISTOR 进步党锗射频晶体
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| 2SB493 |
GERMANIUM PNP ALLOY JUNCTION TRANSISTOR
|
Panasonic
|
| NTE160 |
Germanium PNP Transistor RF-IF Amp, FM Mixer OSC
|
NTE[NTE Electronics]
|
| 2SB468 |
GERMANIUM PNP DIFFUSED BASE ALLOYED EMITTER
|
Unknow
|
| NTE104 |
Germanium PNP Transistor Audio Frequency Power Amplifier
|
NTE[NTE Electronics]
|
| 1N3110 1N949 1N3287 1N3287WUSN 1N3125 1N3146 1N994 |
8 V, 500 mA, gold bonded germanium diode
40 V, 500 mA, gold bonded germanium diode
6 V, 200 mA, gold bonded germanium diode
GOLD BONDED DIODES
6 V, 500 mA, gold bonded germanium diode
25 V, 500 mA, gold bonded germanium diode
60 V, 500 mA, gold bonded germanium diode
15 V, 500 mA, gold bonded germanium diode
|
BKC International Electronics
ETC[ETC]
Electronic Theatre Controls, Inc.
|
| 2N3906RLRPG 2N3906RL1G |
General Purpose Transistors PNP Silicon 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
ON Semiconductor
|
| NTE213 |
Germanium PNP Transistor High Power, High Gain Amplifier
|
NTE[NTE Electronics]
|
| MMBTA92LT1_D ON2140 MMBTA93LT1 |
High Voltage Transistors(PNP Silicon) 50 mA, 200 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236
From old datasheet system
*Motorola Preferred Device
|
ON Semiconductor
|
| 2N3906J18Z 2N3906TA |
PNP General Purpose Amplifier; Package: TO-92; No of Pins: 3; Container: Bulk 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
PNP General Purpose Amplifier; Package: TO-92; No of Pins: 3; Container: Ammo 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
Fairchild Semiconductor, Corp.
|
|
