| PART |
Description |
Maker |
| UPD4416008 UPD4416008G5-A15-9JF UPD4416008G5-A17-9 |
2M X 8 STANDARD SRAM, 17 ns, PDSO54 0.400 INCH, PLASTIC, TSOP2-54
16M-BIT CMOS FAST SRAM 2M-WORD BY 8-BIT
|
NEC
|
| UPD4616112F9-BC80-BC2 UPD4616112F9-BC90-BC2 |
16M-BIT CMOS MOBILE SPECIFIED RAM 1M-WORD BY 16-BIT 1,600位CMOS移动指明内存100万字6
1M X 16 APPLICATION SPECIFIC SRAM, 90 ns, PBGA48 6 X 8 MM, FBGA-48
|
NEC, Corp.
Infineon Technologies AG
NEC Corp.
|
| GX60N60C2D1 |
Fast SRAM > Late Write Synchronous SRAM; Organization (word): 512K; Organization (bit): x 36; Memory capacity (bit): 16M; Supply voltage (V): 150; Operating temperature (°C): 1.5; Package: BGA (119)
|
IXYS CORP
|
| UPD434016AG5 UPD434016AG5-12-7JF UPD434016AG5-15-7 |
4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT
|
NEC[NEC]
|
| M6MGB331S8BKT M6MGT331S8BKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation.
|
| M6MGB331S8AKT M6MGT331S8AKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation.
|
| M6MGB_T160S4BVP M6MGB M6MGB160S4BVP M6MGT160S4BVP |
16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY
16,777,216-BIT CMOS 3.3V-ONLY FLASH MEMORY
CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| IC66LV10016AL IC66LV10016AL-70B |
16M-BIT (1M-WORD BY 16-BIT) Low Power Pseudo SRAM
ASYNCHRONOUS STATIC RAM, Pseudo SRAM
|
Integrated Circuit Solu...
ICSI[Integrated Circuit Solution Inc]
|
| CF5015 CF5015AL2 CF5015AL1-2 CF5015AL2-2 |
Low Power SRAM; Organization (word): 1M; Organization (bit): x 16; Memory capacity (bit): 16M; Access time (ns): 55; Supply voltage (V): 2.7 to 3.6; Operating temperature (°C): 0 to 70; Package: FBGA (48)
Low Power SRAM; Organization (word): 1M; Organization (bit): x 16; Memory capacity (bit): 16M; Access time (ns): 85; Supply voltage (V): 2.7 to 3.6; Operating temperature (°C): -40 to 85; Package: FBGA (48)
Low Power SRAM; Organization (word): 1M; Organization (bit): x 16; Memory capacity (bit): 16M; Access time (ns): 70; Supply voltage (V): 2.7 to 3.6; Operating temperature (°C): 0 to 70; Package: FBGA (48)
Low Power SRAM; Organization (word): 1M; Organization (bit): x 16; Memory capacity (bit): 16M; Access time (ns): 85; Supply voltage (V): 2.7 to 3.6; Operating temperature (°C): 0 to 70; Package: FBGA (48)
Low Power SRAM; Organization (word): 1M; Organization (bit): x 16; Memory capacity (bit): 16M; Access time (ns): 70; Supply voltage (V): 2.7 to 3.6; Operating temperature (°C): -40 to 85; Package: FBGA (48)
Low Power SRAM; Organization (word): 1M; Organization (bit): x 16; Memory capacity (bit): 16M; Access time (ns): 85; Supply voltage (V): 2.7 to 3.6; Operating temperature (°C): 0 to 70; Package: FBGA (48)
Low Power SRAM; Organization (word): 1M; Organization (bit): x 16; Memory capacity (bit): 16M; Access time (ns): 70; Supply voltage (V): 2.7 to 3.6; Operating temperature (°C): 0 to 70; Package: FBGA (48)
Low Power SRAM; Organization (word): 1M; Organization (bit): x 16; Memory capacity (bit): 16M; Access time (ns): 70; Supply voltage (V): 2.7 to 3.6; Operating temperature (°C): -40 to 85; Package: FBGA (48)
|
Seiko NPC Corporation
|
| UPD23C16380GZ-XXX-MJH UPD23C16340 UPD23C16340F9-BC |
16M-BIT MASK-PROGRAMMABLE ROM 2M-WORD BY 8-BIT (BYTE MODE) / 1M-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE
|
NEC[NEC]
|
| M6MGD967W3 |
100,663,296-BIT (6,291,456-WORD BY 16-BIT) CMOS FLASH MEMORY &33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS Mobile RAM
|
RENESA
|
