PART |
Description |
Maker |
AM27C512-120DC |
512 Kilobit (64 K x 8-Bit) CMOS EPROM
|
AMD
|
AM27C512-200DC AM27C512-200DCB AM27C512-200DE AM27 |
512 Kilobit (64 K x 8-Bit) CMOS EPROM
|
Advanced Micro Devices
|
AT25F512B-SSH-B AT25F512B-SSH-T AT25F512B AT25F512 |
512-Kilobit 2.7-volt Minimum SPI Serial Flash Memory
|
ATMEL Corporation
|
AM28F512 AM28F512150PC AM28F512-120JEB AM28F512-90 |
512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory(12V,CMOS 512K位整体擦除闪速存储器) IC-512K FLASH MEMORY 4-bit magnitude comparators 16-PDIP 0 to 70 Quad 2-input exclusive-OR gates 14-PDIP 0 to 70 Decade Counter 14-SOIC 0 to 70 Dual J-K Flip-Flops with Clear 14-PDIP 0 to 70 8-Bit Identity/Magnitude Comparators (P=Q) with Enable 20-SOIC 0 to 70 Dual J-K Flip-Flops with Clear 14-SOIC 0 to 70 Quad bistable latches 16-SOIC 0 to 70 Dual D-type pos.-edge-triggered flip-flops with preset and clear 14-PDIP 0 to 70 4-bit magnitude comparators 16-SOIC 0 to 70 Quad bistable latches 16-PDIP 0 to 70 Dual D-type pos.-edge-triggered flip-flops with preset and clear 14-SO 0 to 70 8-Bit Identity/Magnitude Comparators (P=Q) with Enable 20-SO 0 to 70 Dual D-type pos.-edge-triggered flip-flops with preset and clear 14-SSOP 0 to 70 Dual D-type pos.-edge-triggered flip-flops with preset and clear 14-SOIC 0 to 70 8-Bit Identity/Magnitude Comparators 20-PDIP 0 to 70 64K X 8 FLASH 12V PROM, 120 ns, PDIP32 8-Bit Identity/Magnitude Comparators 20-SOIC 0 to 70 64K X 8 FLASH 12V PROM, 120 ns, PDIP32 512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 64K X 8 FLASH 12V PROM, 90 ns, PDSO32 8-Bit Identity/Magnitude Comparators 20-SOIC 0 to 70 64K X 8 FLASH 12V PROM, 120 ns, PQCC32 Quad 2-input exclusive-OR gates 14-SOIC 0 to 70 64K X 8 FLASH 12V PROM, 90 ns, PQCC32 512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 64K X 8 FLASH 12V PROM, 90 ns, PQCC32 Quad 2-input exclusive-OR gates 14-SO 0 to 70 64K X 8 FLASH 12V PROM, 90 ns, PDIP32 8-Bit Identity/Magnitude Comparators (P=Q) with Enable 20-PDIP 0 to 70 64K X 8 FLASH 12V PROM, 150 ns, PDSO32 ER 14C 14#16 PIN RECP LINE 64K X 8 FLASH 12V PROM, 120 ns, PDSO32
|
Advanced Micro Devices, Inc. PROM ADVANCED MICRO DEVICES INC SPANSION LLC
|
AM28F512A-120JEB AM28F512A-120PEB AM28F512A-120FEB |
Divide-By-Twelve Decade Counter 14-PDIP 0 to 70 Divide-By-Twelve Decade Counter 14-SOIC 0 to 70 Quadruple 2-Input Positive-NAND Gates 14-SOIC -40 to 85 Quadruple 2-Input Positive-NAND Gates 14-SO -40 to 85 Quadruple 2-Input Positive-Nor Gates 14-TVSOP -40 to 85 4-Bit Binary Counters 14-SO 0 to 70 512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 512千比特(64亩8位)的CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法 Quadruple 2-Input Positive-Nor Gates 14-TSSOP -40 to 85 2正输入或非门 14-TSSOP封装40℃到85 Hex Inverters 14-SSOP -40 to 85 512千比特(64亩8位)的CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法 Hex Inverters 14-TVSOP -40 to 85 512千比特(64亩8位)的CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法 Hex Inverters 14-SO -40 to 85 512千比特(64亩8位)的CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法 4-Bit Binary Counters 14-SOIC 0 to 70 64K X 8 FLASH 12V PROM, 150 ns, PDSO32 Quadruple 2-Input Positive-NAND Gates 14-TVSOP -40 to 85 64K X 8 FLASH 12V PROM, 200 ns, PDSO32 512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 64K X 8 FLASH 12V PROM, 120 ns, PQCC32 Quadruple 2-Input Positive-NAND Gates 14-TSSOP -40 to 85 512千比特(64亩8位)的CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法 Hex Inverters 14-SOIC -40 to 85 64K X 8 FLASH 12V PROM, 90 ns, PDIP32 Quadruple 2-Input Positive-Nor Gates 14-SO -40 to 85 64K X 8 FLASH 12V PROM, 70 ns, PQCC32 Quadruple 2-Input Positive-Nor Gates 14-SOIC -40 to 85
|
Advanced Micro Devices, Inc. PROM ADVANCED MICRO DEVICES INC
|
AM29F040B-1 AM29F040B-120EC AM29F040B-120EE AM29F0 |
From old datasheet system EEPROM,FLASH,512KX8,CMOS,DIP,32PIN,PLASTIC 4 Mbit (512 K x 8-Bit) 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
|
AMD[Advanced Micro Devices] AMD Inc
|
AM29DL800BB120FI AM29DL800BB90SEB AM29DL800BT90SEB |
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 512K X 16 FLASH 3V PROM, 70 ns, PDSO44 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 1M X 8 FLASH 3V PROM, 120 ns, PDSO48 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 512K X 16 FLASH 3V PROM, 90 ns, PDSO48 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 512K X 16 FLASH 3V PROM, 90 ns, PBGA48 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 8兆位 M中的x 8-Bit/512亩x 16位).0伏的CMOS只,同时作业快闪记忆
|
Advanced Micro Devices, Inc. http://
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LPC2157 LPC2158 LPC215709 LPC2157FBD100551 |
Single-chip 16-bit/32-bit microcontrollers; 512 kB flash, with 32 segment x 4 LCD driver, SOT407-1 (LQFP100), Tray Dry Pack, Bakeable, Single 32-BIT, FLASH, 60 MHz, RISC MICROCONTROLLER, PQFP100 Single-chip 16-bit/32-bit microcontrollers 512 kB flash, with 32 segment x 4 LCD driver
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NXP Semiconductors N.V.
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AM41DL3208GB70I AM41DL3208GB85I AM41DL3208GT30IT A |
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM
|
AMD[Advanced Micro Devices] SPANSION
|
AM41DL32X4GB70IS AM41DL32X4GB70IT AM41DL32X4GB85IS |
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM
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AMD[Advanced Micro Devices] SPANSION
|
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