| PART |
Description |
Maker |
| UPD42S4170AG5M-70 UPD424170AV-70 UPD424170LG5M-A70 |
256K X 16 FAST PAGE DRAM, 70 ns, PDSO40 0.300 INCH, PLASTIC, REVERSE, TSOP2-44/40
256K X 16 FAST PAGE DRAM, 70 ns, PZIP40 0.400 INCH, PLASTIC, ZIP-40
256K X 16 FAST PAGE DRAM, 80 ns, PDSO40
256K X 16 FAST PAGE DRAM, 60 ns, PDSO40
|
Infineon Technologies AG
|
| TC514280BZLL-70 TC5116440BSJ-70 TC5116105BSJ-60 TC |
256K X 18 FAST PAGE DRAM, 70 ns, PZIP40 ZIP-40
4M X 4 OTHER DRAM, 70 ns, PDSO26
16M X 1 EDO DRAM, 60 ns, PDSO24
4M X 4 OTHER DRAM, 50 ns, PDSO26
16K X 4 CACHE SRAM, 10 ns, PDIP24
|
SIEMENS AG
|
| AS4C256K16E0 |
5V 256K×16 CMOS DRAM (EDO)(5V 256K×16 CMOS动态RAM（扩展数据总线
|
Alliance Semiconductor Corporation
|
| UPD42S4263AG5-80 UPD42S4263AV-70 UPD42S4263ALE-60 |
256K X 16 FAST PAGE DRAM, 80 ns, PDSO40
256K X 16 FAST PAGE DRAM, 70 ns, PZIP40
256K X 16 FAST PAGE DRAM, 60 ns, PDSO40
256K X 16 FAST PAGE DRAM, 70 ns, PDSO40
|
|
| KM44C258CP-6 KM44C258CJ-6 KM44C258CJ-8 KM44C258CP- |
256K X 4 STATIC COLUMN DRAM, 60 ns, PDIP20
256K X 4 STATIC COLUMN DRAM, 60 ns, PDSO20
256K X 4 STATIC COLUMN DRAM, 80 ns, PDSO20
256K X 4 STATIC COLUMN DRAM, 80 ns, PDIP20
|
|
| KM4216V258G-70 KM4216C255G-80 |
256K X 16 VIDEO DRAM, 70 ns, PDSO64 SSOP-64
256K X 16 VIDEO DRAM, 80 ns, PDSO64
|
|
| HYB314175BJ-50- HYB314175BJL-50 HYB314175BJ-60 HYB |
High-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD -40 to 85 3.3V56亩16位江户的DRAM 3.3V56亩16位江户与DRAM的低功率版本自刷
3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh
3.3V 256 K x 16-Bit EDO-DRAM(3.3V 256K×16外延式数据输出（EDO)动态RAM)
|
http://
SIEMENS AG
|
| P21464 |
256K DRAM
|
Intel
|
| UD61256 UD61256JC08 UD61256DC07 UD61256DC08 UD6125 |
256K x 1 DRAM
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| MCM514256A MCM51L4256A |
256K x 4 CMOS DRAM
|
Motorola
|
| HY534256A HY534256AJ HY534256ALJ HY534256ALS HY534 |
256K x 4-bit CMOS DRAM
|
HYNIX[Hynix Semiconductor]
|
| V53C832HU50 |
256K X 32 EDO DRAM, 50 ns, PQFP100
|
MOSEL-VITELIC
|
|
