| PART |
Description |
Maker |
| BLF872 BLF872-2015 |
UHF power LDMOS transistor
UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
|
NXP Semiconductors
Quanzhou Jinmei Electro...
|
| MS1490 |
RF & MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS
UHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Power Technolo...
Advanced Power Technology
|
| BLV948 |
UHF push-pull power transistor
RF POWER TRANSISTORS FOR UHF
|
New Jersey Semi-Conductor P...
New Jersey Semiconductors
|
| BLW33 |
UHF Linear power transistor(UHF 线性功率晶体管)
UHF linear power transistor
|
Philips Semiconductors
NXP Semiconductors
|
| 2SC3841 2SC3841P 2SC3841Q 2SC3841T62 2SC3841T64 2S |
For UHF tuner, MIXER and OSC.
UHF OSCILLATOR AND UHF MIXER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD
TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 30MA I(C) | SOT-346
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits 晶体管|晶体管|叩| 12V的五（巴西）总裁| 30mA的一（c）|的SOT - 346
|
NEC[NEC]
NEC Corp.
NEC, Corp.
|
| PBR941 934043060215 |
UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
UHF wideband transistor
|
Philips Semiconductors
NXP Semiconductors
|
| MS1582 |
UHF 860-960 MHz, Class A/AB, Common Emitter; fO (MHz): 0; P(out) (W): 25; Gain (dB): 9; Vcc (V): 25; ICQ (A): 3.2; IMD Type (dB): -45; Case Style: M173 UHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Microsemi, Corp.
|
| KTC4021 |
EPITAXIAL PLANAR NPN TRANSISTOR (TV TUNER, UHF OSCILLATOR, TVTUNER UHF CONVERTER)
|
KEC[KEC(Korea Electronics)]
|
| BLV920 |
UHF power transistor
|
NXP Semiconductors
Philips Semiconductors
|
| BLV935 |
UHF power transistor
|
NXP Semiconductors
Philips Semiconductors
|
| BLT52 |
UHF power transistor
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
