PART |
Description |
Maker |
BH616UV8010AI55 BH616UV8010TI70 BH616UV8010DIP55 B |
Ultra Low Power/High Speed CMOS SRAM 512K X 16 bit
|
Brilliance Semiconductor
|
N08L163WC2A |
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16 bit 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K 】 16 bit
|
NANOAMP[NanoAmp Solutions, Inc.]
|
BH62UV4000HIG55 BH62UV4000STI55 BH62UV4000DIG55 BH |
Ultra Low Power/High Speed CMOS SRAM 512K X 8 bit
|
Brilliance Semiconductor
|
BH616UV8010TC BH616UV8010TI BH616UV8010TIG70 BH616 |
Ultra Low Power/High Speed CMOS SRAM 512K X 16 bit
|
Brilliance Semiconducto... BSI[Brilliance Semiconductor] BRILLIANCE SEMICONDUCTOR, INC.
|
N08M163WL1A |
8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 512K x 16 bit
|
NanoAmp Solutions
|
N08L6182AB27I N08L6182AB27IT N08L6182AB7I N08L6182 |
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K 隆驴 16bit 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K ? 16bit 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16bit 8 Mb, 1.8 V Low Power SRAM; Package: BGA Green; No of Pins: 48; Container: Tray; Qty per Container: 300 512K X 16 STANDARD SRAM, 85 ns, PBGA48 8 Mb, 1.8 V Low Power SRAM; Package: BGA; No of Pins: 48; Container: Tray; Qty per Container: 300 512K X 16 STANDARD SRAM, 85 ns, PBGA48
|
ON Semiconductor
|
MAX5510 MAX5511ETC MAX5510ETC MAX5510ETCT MAX5511 |
1.8V to 5.5V, Ultra-Low-Power, 8-Bit, Voltage-Output DACs SERIAL INPUT LOADING, 660 us SETTLING TIME, 8-BIT DAC, QCC12 1.8V to 5.5V. Ultra-Low-Power. 8-Bit. Voltage-Output DACs
|
MAXIM - Dallas Semiconductor MAXIM[Maxim Integrated Products] Maxim Integrated Products, Inc.
|
N08L63W2A |
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K X 16bit
|
ON Semiconductor
|
89LV1632RPQK-30 |
16 Megabit (512K x 32-Bit) Low Voltage MCM SRAM 512K X 32 MULTI DEVICE SRAM MODULE, 30 ns, CQFP68 16 Megabit (512K x 32-Bit) Low Voltage MCM SRAM 16兆位12k × 32的位)低压亿立方米的SRAM
|
Maxwell Technologies, Inc
|
CMP0817BAX-E CMP0817BAX-F70E CMP0817BA1 CMP0817BA2 |
512K x 16 bit Super Low Power and Low Voltage Full CMOS RAM
|
FIDELIX
|