| PART |
Description |
Maker |
| 10JDA20 |
DIDOE - 1A 200V TJ = 150C
|
NIEC[Nihon Inter Electronics Corporation]
|
| 10DDA20 |
DIODE - 1A 200V TJ = 150C 1 A, 200 V, SILICON, SIGNAL DIODE
|
Nihon Inter Electronics, Corp.
NIEC[Nihon Inter Electronics Corporation]
|
| ET-T1465 12D4 17D4 6DA4 |
For Tv damping didoe applcations
|
General Electric Company
|
| 10EDA60 |
DIODE - 1A 600V TJ = 150C
|
NIEC[Nihon Inter Electronics Corporation]
|
| 10DDA60 |
From old datasheet system
DIODE - 1A 600V TJ = 150C
|
NIEC[Nihon Inter Electronics Corporation]
|
| C0805C472J5HACTU |
Ceramic, 150C-(CxxxxC), 4700 pF, 5%, 50 V, 0805, X8R, SMD, MLCC, High Temperature, Ultra-Stable
|
Kemet Corporation
|
| 10EDB60 |
Long Life Miniature Relay, Plug-In 0.9 A, 600 V, SILICON, SIGNAL DIODE
DIODE - 1A 600V TJ =150C
|
Nihon Inter Electronics, Corp.
NIEC[Nihon Inter Electronics Corporation]
|
| BYW51-200 |
8A, 100V - 200V Ultrafast Dual Diodes(8A, 100V - 200V 超快速二极管) 8 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB
|
ON Semiconductor
|
| FQU630 FQD630 FQD630TM |
200V N-Channel QFET
200V N-Channel MOSFET(N沟道增强型MOS场效应管（漏电流7A, 漏源电压200V，导通电.4Ω
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| IRF610B IRF610BFP001 |
200V N-Channel B-FET / Substitute of IRF610 & IRF610A
200V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
