| PART |
Description |
Maker |
| BUP410D Q67040-A4425-A2 |
IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode)
High Speed CMOS Logic 7-Stage Binary Ripple Counter 14-TSSOP -55 to 125
|
Siemens Semiconductor Group
SIEMENS AG
|
| 1SS357 |
DIODE (LOW VOLTAGE HIGH SPEED SWITCHING)
|
TOSHIBA[Toshiba Semiconductor]
|
| BUP314D Q67040-A4226-A2 |
From old datasheet system
IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode) 由于IGBT的反平行二极管（低正向压降高开关速度低尾电流的无闩锁包括快速滑行二极管
|
Siemens Semiconductor Group
SIEMENS AG
|
| BUP200D Q67040-A4420-A2 BUP200-D |
IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free) 3.6 A, 1200 V, N-CHANNEL IGBT, TO-220AB
High Speed CMOS Logic 7-Stage Binary Ripple Counter 14-SOIC -55 to 125 由于IGBT的反平行二极管（低正向压降高开关速度低尾电流闭锁免费
From old datasheet system
IGBT Duopack (IGBT with Antiparallel ...
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| KDR377E |
SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)
|
KEC[KEC(Korea Electronics)]
|
| 1SS319 |
Diode Silicon Epitaxial Planar Type Low Voltage High Speed Switching
|
TOSHIBA
|
| HRB0103B |
Silicon Schottky Barrier Diode for Low Voltage High Speed Switching , Rectifying
|
Renesas Electronics Corporation
|
| HRB0103B |
Silicon Schottky Barrier Diode for Low Voltage High Speed Switching , Rectifying
Silicon Schottky Barrier Diode for Low Voltage High Speed Switching Rectifying
|
HITACHI[Hitachi Semiconductor]
|
| 1SS293 |
Diode Silicon Epitaxial Schottoky Barrier Type Low Voltage High Speed Switching
|
TOSHIBA
|
| HN2S01FU |
Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching Application
|
TOSHIBA
|
| 1SS398 |
Diode Silicon Epitaxial Planar Diode High Voltage High Speed Switching Applications
|
TOSHIBA
|
