PART |
Description |
Maker |
IS45S16100C1-7TA1 IS45S16100C1-7TLA1 IS45S16100C1- |
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
|
Integrated Silicon Solution, Inc.
|
IC42S32200L IC42S32200 IC42S32200_L-6B IC42S32200_ |
512K Words x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
|
Integrated Circuit Systems ICSI
|
W986432AH W986432AHA1 |
512K x 4 BANKS x 32 BITS SDRAM 512K x 4 BANKS x 32 BITS SDRAM From old datasheet system
|
Winbond Electronics WINBOND[Winbond]
|
IS42S16400 IS42S8800 IS42S8800L IS42S16400L |
2(1)M words x 8(16) bits x 4 banks (64-mbit) synchronous dynamic ram
|
ICSI[Integrated Circuit Solution Inc]
|
EDE1108AASE-6E-E EDE1104AASE EDE1104AASE-4A-E EDE1 |
1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks.
|
ELPIDA[Elpida Memory]
|
EDS2532AABJ-75-E EDS2532AABJ-75L-E |
256M bits SDRAM (8M words 32 bits) 8M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90 256M bits SDRAM (8M words 32 bits) 256M位的SDRAM00万字32位) 256M bits SDRAM (8M words ?32 bits)
|
Elpida Memory, Inc. ELPIDA MEMORY INC
|
W981616AH W981616AHB1 |
512 x 2 Banks x 16 Bits SDRAM 512K x 2 BANKS x 16 BIT SDRAM From old datasheet system
|
Winbond Electronics
|
K4C89323AF-GCFB K4C89323AF-TCF6 K4C89323AF-TCF5 K4 |
2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
EBD11ED8ABFB-7B EBD11ED8ABFB EBD11ED8ABFB-6B EBD11 |
1GB Unbuffered DDR SDRAM DIMM EBD11ED8ABFB (128M words 72 bits/ 2 Banks) 1GB Unbuffered DDR SDRAM DIMM EBD11ED8ABFB (128M words 】 72 bits, 2 Banks) 1GB Unbuffered DDR SDRAM DIMM EBD11ED8ABFB (128M words × 72 bits, 2 Banks)
|
ELPIDA[Elpida Memory]
|
IS42S32200C1-6T IS42S32200C1-7BL IS42S32200C1-6BL |
512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM 2M X 32 SYNCHRONOUS DRAM, 5.5 ns, PDSO86
|
Integrated Silicon Solution, Inc.
|
W9816G6IH W9816G6IH-7I W9816G6IH-6I W9816G6IH-5 |
512K × 2 BANKS × 16 BITS SDRAM 512K 隆驴 2 BANKS 隆驴 16 BITS SDRAM
|
Winbond
|
W9816G6CH W9816G6CH-5 W9816G6CH-6 W9816G6CH-7 |
512K 】 2 BANKS 】 16 BITS SDRAM
|
Winbond
|