| PART |
Description |
Maker |
| MHW607-2 |
(MHW607-x) VHF Power Amplifiers
|
Motorola Semiconductor
|
| TBB1010KMTL-H TBB101011 |
Twin Built in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier
|
Renesas Electronics Corporation
|
| BGY43 |
VHF power amplifier module
|
NXP Semiconductors
Philips Semiconductors
|
| S-AV36A |
RF POWER AMPLIFIER MODULE FM RF POWER AMPLIFIER MODULE FOR 80-W COMMERCIAL VHF RADIO APPLICATIONS
|
Toshiba Semiconductor
|
| S-AV37A |
RF POWER AMPLIFIER MODULE FM RF POWER AMPLIFIER MODULE FOR 32-W COMMERCIAL VHF RADIO APPLICATIONS
|
Toshiba Semiconductor
|
| 2SC2782A |
VHF BAND POWER AMPLIFIER APPLICATIONS
|
Toshiba Semiconductor
|
| 2SK3475 |
Field Effect Transistor Silicon N Channel MOS Type VHF- and UHF-band Amplifier Applications
VHF-and UHF-band Amplifier Applications
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
|
| NE55410GR NE55410GR-T3-AZ 55410 |
N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
|
CEL[California Eastern Labs]
|
| 2SK307407 2SK3074 |
SILICON N CHANNEL MOS TYPE RF POWER MOSFET FOR VHF−AND UHF-BAND POWER AMPLIFIER
|
Toshiba Semiconductor
|
| 2SC2782 |
TRANSISTOR (VHF BAND POWER AMPLIFIER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SC2639 |
TRANSISTOR (VHF BAND POWER AMPLIFIER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
