| PART |
Description |
Maker |
| HZIP23-P-1.27F HZIP23-P-1.27H HZIP23-P-1.27G |
Intelligent Power Device High Voltage Monolithic Silicon Power IC 智能功率器件单片硅高压功率IC
|
Toshiba Corporation
Toshiba, Corp.
|
| TPD4125AK |
Intelligent Power Device High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
| TPD4123AK |
Intelligent Power Device High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
| TPD4124K |
Intelligent Power Device High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
| TPD4113K HZIP23-P-1.27F HZIP23-P-1.27G HZIP23-P-1. |
INTELLIGENT POWER DEVICE HIGH VOLTAGE MONOLITHIC SILICON POWER IC
|
Toshiba Semiconductor
|
| TPD4102K |
TOSHIBA Intelligent Power Device High Voltage Monolithic Silicon Power IC 东芝智能功率器件单片硅高压功率IC
|
Toshiba, Corp.
Toshiba Semiconductor
|
| UPD166011T1J UPD166011T1J-E1-AY |
INTELLIGENT POWER DEVICE
|
Renesas Electronics Corporation
|
| UPD166026T1K |
INTELLIGENT POWER DEVICE
|
Renesas Electronics Corporation
|
| IR6216 |
Intelligent Power Switch 1 Channel High Side Driver in a TO-220FL Package
INTELLIGENT HIGH SIDE MOSFET POWER SWITCH
|
International Rectifier
|
| UPD166017T1F UPD166017T1F-E1-AY |
INTELLIGENT POWER DEVICE
INTELLIGENT POWER DEVICE
|
Renesas Electronics Corporation
|
| IPS5451 IPS5451S IPS5451STRL |
Intelligent Power Switch 1 Channel High Side Driver in a D2-Pak 5-Lead Package
Intelligent Power Switch 1 Channel High Side Driver in a TO-220FL Package
FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH
|
International Rectifier
|
| MIG100J101H |
Intelligent Power Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
|
TOSHIBA[Toshiba Semiconductor]
|
