PART |
Description |
Maker |
CFY25-P CFY25 CFY25-20 CFY25-20P CFY25-23 CFY25-23 |
X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET HiRel X-Band GaAs Low Noise / General Purpose MESFET 伊雷尔X波段功率低噪通用场效应晶体管
|
TRIQUINT SEMICONDUCTOR INC INFINEON[Infineon Technologies AG]
|
NJG1101F NJG1101F-C1 NJG1101F-C2 NJG1101F-C3 NJG11 |
WIDE BAND AGC AMPLIFIER GaAs MMIC WIDE BAND AGC AMPLIFIER GaAs MMIC 宽频带AGC放大器,砷化镓微波单片集成电
|
NJRC[New Japan Radio] New Japan Radio Co., Ltd.
|
NJW1328 |
Multi Input Wide Band Video Interface with I2C Control
|
New Japan Radio
|
NJW1326 |
Multi Input Wide Band Video Interface with I2C Control
|
New Japan Radio
|
MGFC39V3742A04 MGFC39V3742A |
C BAND, GaAs, N-CHANNEL, RF POWER, JFET 3.7 ~ 4.2GHz BAND 8W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
CGY41 |
HiRel L- and S-Band GaAs General Purpose Amplifier 伊雷尔L -S波段砷化镓通用放大
|
INFINEON[Infineon Technologies AG]
|
CMM9000-QT10 CMM9000-QT-0G00 |
1.5-6.0 GHz GaAs MMIC 1500 MHz - 6000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
MIMIX BROADBAND INC
|
MGF0909A MGF0909 0909A |
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET L,S BAND POWER GaAs FET L /S BAND POWER GaAs FET From old datasheet system
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
SA5205AD SA5205AN NE5205AD NE5205AN NE5205A SA5205 |
Wide-band high-frequency amplifier 0 MHz - 600 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
|