PART |
Description |
Maker |
MIE-114A1 114A1 |
Infrared Emitting Diodes (IRED) GaAlAs/GaAs HIGH POWER SIDE LOOK PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
MIE-514L3 514L3 |
GaAlAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE 发动器的T 1 3 / 4包装红外发光二极 Infrared Emitting Diodes (IRED)
|
Unity Opto Technology Co., Ltd. UOT[Unity Opto Technology]
|
554A4 MIE-554A4 |
Infrared Emitting Diodes (IRED) AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE
|
Unity Opto Technology
|
OP233 OP232 OP231 |
GaAs HERMETIC INFRARED EMITTING DIODES GaALAs Hermetic Infrared Emitting Diode(铝砷化镓密封红外发光二极工作温度范围-65 125
|
OPTEK Technologies Optek Technology
|
TSUS4400 |
GaAs Infrared Emitting Diode in ?3 mm (T-1) Package GaAs Infrared Emitting Diode in 庐3 mm (T-1) Package GaAs Infrared Emitting Diode in ?3 mm (T-1) Package From old datasheet system
|
VISAY[Vishay Siliconix]
|
LNA2901L |
GaAs Infrared Light Emitting Diode 5 mm, 1 ELEMENT, INFRARED LED, 950 nm
|
Panasonic, Corp. PANASONIC[Panasonic Semiconductor]
|
QEC113 QEC112 |
GAAS INFRARED EMITTING DIODE 2.9 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
QT[QT Optoelectronics]
|
1N6266 |
GAAS INFRARED EMITTING DIODE 1 ELEMENT, INFRARED LED, 940 nm
|
QT[QT Optoelectronics]
|
F5D3 F5D1 F5D2 F5D1B |
AlGaAs INFRARED EMITTING DIODE 1 ELEMENT, INFRARED LED, 880 nm
|
FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor Corporation Fairchild Semiconductor, Corp.
|
AA3528AF3C |
2.4 mm, 1 ELEMENT, INFRARED LED, 940 nm 3.5x2.8 mm INFRARED EMITTING DIODE
|
Kingbright Corporation
|