| PART |
Description |
Maker |
| 2N6764 |
N-Channel Power MOSFETs/ 38A/ 60V/100V
|
Fairchild Semiconductor
|
| STP45NF06 |
N-CHANNEL 60V - 0.022ohm - 38A TO-220 STripFETPOWER MOSFET N沟道60V 0.022ohm - 38A条，220 STripFET⑩功率MOSFET
N-CHANNEL 60V - 0.022ohm - 38A TO-220 STripFET⑩ POWER MOSFET
N-CHANNEL 60V - 0.022ohm - 38A TO-220 STripFET POWER MOSFET
N-CHANNEL 60V 0.022 OHM 38A TO-220 STRIPFET POWER MOSFET
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| APT6015B2VR APT6015 |
POWER MOS V 600V 38A 0.150 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT8020B2FLL APT8020LFLL |
POWER MOS 7 800V 38A 0.200 Ohm
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 电源MOS 7TM是一个低损耗，高电压，N沟道增强型功率MOSFET的新一代
|
Advanced Power Technology Ltd.
Advanced Power Technology, Ltd.
|
| STB45NF06 |
N-CHANNEL 60V - 0.022ohm - 38A D2PAK STripFETPOWER MOSFET N沟道60V 0.022ohm - 38A条采用D2PAK STripFET⑩功率MOSFET
N-CHANNEL 60V - 0.022ohm - 38A D2PAK STripFET⑩ POWER MOSFET
N-CHANNEL 60V - 0.022ohm - 38A D2PAK STripFET POWER MOSFET
N-CHANNEL 60V 0.022OHM 38A D2PAK STRIPFET POWER MOSFET
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| IXFH4N100 IXFT4N100 IXFH4N100Q IXFT4N100Q |
N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源击穿电000V,导通电.0Ω的N沟道增强型HiPerFET功率MOSFET) 4 A, 1000 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 4A I(D) | TO-247AD
HiPerFET Power MOSFETs Q-Class
Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| JANTXV2N6764 JANTX2N6764 |
POWER MOSFET N-CHANNEL(BVdss=100V/ Rds(on)=0.055ohm/ Id=38A)
POWER MOSFET N-CHANNEL(BVdss=100V Rds(on)=0.055ohm Id=38A)
POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.055ohm, Id=38A)
|
IRF[International Rectifier]
|
| FSPYE234D1 FSPYE234F4 FN4873 FSPYE234R4 FSPYE234F |
From old datasheet system
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 9 A, 250 V, 0.215 ohm, N-CHANNEL, Si, POWER, MOSFET
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗辐N沟道MOS场效应管) 抗辐射，抗SEGR N沟道功率MOSFET（抗辐射沟道马鞍山场效应管）
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| HUF76633P312 |
38A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFET? Power MOSFET
|
Fairchild Semiconductor
|
| APT10026L2FLL |
Circular Connector; No. of Contacts:61; Series:MS27656; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:25; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle RoHS Compliant: No
POWER MOS 7 1000V 38A 0.260 Ohm
1000V, 38A power MOS 7 transistor
|
Advanced Power Technology Ltd.
|
| FSJ163R4 FSJ163D FSJ163D1 FSJ163D3 FSJ163R FSJ163R |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
44A/ 200V/ 0.050 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
70A/ 100V/ 0.022 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
|
