| PART |
Description |
Maker |
| 2SC305310 |
FOR HIGH FREQUENCY AMPLIFY, MEDIUM FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| 2SC3351-T2B 2SC3351-T1B |
For amplify low noise and high frequency.
|
NEC
|
| 2SC5621 |
FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| 2SC2954 2SC2954-T1 |
For amplify high frequency, low noise, and wide band.
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
|
NEC
|
| RT2A00AM1 |
COMPOSITE TRANSISTOR FOR LOW FREQUENCY AMPLIFY APPLICATION
|
Isahaya Electronics Cor...
|
| INC6002AC1 |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN TRANSISTOR
|
Isahaya Electronics Corporation
|
| 2SC3052 |
LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
|
ETC[ETC]
Isahaya Electronics Corporation
|
| INA6006AP1 |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| 2SC5817 2SC5814 2SC5815 2SC5816 |
For Low Frequency Amplify Application Silicon NPN Epitaxial Type
|
ISAHAYA[Isahaya Electronics Corporation]
|
| 2SD1447 |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
|
Isahaya Electronics Corporation
Panasonic Semiconductor
|
