| PART |
Description |
Maker |
| UG42W6414GSG UG42W6446GSG UG42W6416GSG |
16M BYTES (2M X 64 BITS) EDO MODE UNBUFFERED SODIMM
|
List of Unclassifed Manufacturers
http://
ETC[ETC]
|
| UG42W6448GSG |
16M Bytes (2M x 64 bits) EDO Mode Unbuffered SODIMM 1,600字节米64位），江户模式缓冲的SODIMM
|
Electronic Theatre Controls, Inc.
|
| TC58NS128ADC |
128-MBIT (16M x 8 BITS) CMOS NAND E PROM (16M BYTE SmartMedia )
|
TOSHIBA
|
| EDD2516AKTA-E |
256M bits DDR SDRAM (16M words x16 bits DDR400)
|
Elpida Memory
|
| TC58FVM7T2AFT65 TC58FVM7B2 TC58FVM7B2AFT TC58FVM7B |
128-MBIT (16M X 8 BITS / 8M X 16 BITS) CMOS FLASH MEMORY
|
TOSHIBA[Toshiba Semiconductor]
|
| EDL5132CBMA-10-E |
512M bits Mobile RAM MCP 2 pcs of 256Mb components (16M words x 32 bits)
|
Elpida Memory, Inc.
|
| EDS2516CDTA-75-E |
256M bits SDRAM (16M words x 16 bits)
|
Elpida Memory, Inc.
|
| EDS1616AGTA-75-E EDS1616AGTA EDS1616AGTA-6B-E |
16M bits SDRAM (1M words x 16 bits)
|
ELPIDA[Elpida Memory]
|
| TC5165405BFTS-40 |
16M X 4 EDO DRAM, 40 ns, PDSO32
|
|
| GM71V17403C GM71V17403C-5 GM71V17403C-6 GM71V17403 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 50ns
4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM
4Mx4|3.3V|2K|5/6/7|FP/EDO DRAM - 16M
x4 EDO Page Mode DRAM 4M X 4 EDO DRAM, 70 ns, PDSO24
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| MC-4216LFC721FH-A60 |
16M X 72 EDO DRAM MODULE, 60 ns, PDMA168
|
|
| IBM0164405B |
16M x 4 13/11 EDO DRAM(16M x 4 动态RAM（超页面模式并带24条地址线，其中13条为行地址选通，11条为列地址选通）) 1,600 × 4 13/11 EDO公司的DRAM,600 × 4动态随机存储器（超页面模式并带24条地址线，其中13条为行地址选通，11条为列地址选通）
|
International Business Machines, Corp.
|
