PART |
Description |
Maker |
MGF0905A MGF0905 0905A |
MINIATURE POWER RELAY L /S BAND POWER GaAs FET L,S BAND POWER GaAs FET LS BAND POWER GaAs FET From old datasheet system
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
FLL21E060IY |
S BAND, GaAs, N-CHANNEL, RF POWER, JFET L,S-band High Power GaAs FET
|
Eudyna Devices Inc
|
CLX27-10 CLX27 CLX27-00 CLX27-05 CLX27-10H |
X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET HiRel X-Band GaAs Power-MESFET 伊雷尔X波段砷化镓功率场效应
|
INFINEON[Infineon Technologies AG]
|
MGF0906 MGF0906B 0906B |
LS BAND POWER GaAs FET L /S BAND POWER GaAs FET From old datasheet system L,S BAND POWER GaAs FET
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGF0907 MGF0907B |
L /S BAND POWER GaAs FET MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
|
Mitsubishi Electric Corporation
|
AFM08P2-000 |
KA BAND, GaAs, N-CHANNEL, RF POWER, MESFET Ka Band Power GaAs MESFET Chip
|
Alpha Industries, Inc. ALPHA[Alpha Industries] Alpha Industries Inc
|
AFM06P2-000 |
KA BAND, GaAs, N-CHANNEL, RF POWER, MESFET Ka Band Power GaAs MESFET Chip
|
ALPHA[Alpha Industries] Alpha Industries Inc
|
RFS1006 PRFS-1006-0007 PRFS-1006-0008 PRFS-1006-00 |
3.4-3.6 GHz Power Amplifier 3400 MHz - 3600 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER 3.4-3.6 GHz Power Amplifier 3号至三月六日GHz功率放大 Single-band power amplifiers The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ...
|
ANADIGICS, Inc. ANADIGICS[ANADIGICS, Inc] ANADIGICS[ANADIGICS Inc]
|
MGF0904A |
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
|
Mitsubishi Electric Corporation
|
FLK207MH-14 |
X, Ku Band Power GaAs FET
|
Eudyna Devices Inc
|
HWF1682RA |
20 W L-band GaAs power FET
|
HEXAWAVE
|
HWF1686RA |
5.4 W L-band GaAs power FET
|
HEXAWAVE
|