PART |
Description |
Maker |
BBY53-03W Q62702-B0825 BBY5303W |
Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation) From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
BBY55-03W BBY5503W Q62702-B0911 |
From old datasheet system Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance)
|
SIEMENS[Siemens Semiconductor Group] Infineon Siemens Group
|
BBY56-02W BBY5602W |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) From old datasheet system
|
SIEMENS AG Siemens Group SIEMENS[Siemens Semiconductor Group]
|
BBY55-02W BBY5502W Q62702-B0913 |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) 硅调谐二极管(极好的线性高Q hyperabrupt调谐二极管低串联电感 From old datasheet system
|
SIEMENS AG Siemens Group Infineon SIEMENS[Siemens Semiconductor Group]
|
Q62702-B915 BBY57-02W BBY5702W |
From old datasheet system Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance High capacitance ratio)
|
Siemens Group SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|
MMVL109T1 MMVL109T1G |
Tuning Diode SOD323 30V VHF BAND, 29 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE Silicon Epicap Diodes
|
ONSEMI[ON Semiconductor]
|
MMVL409T1G MMVL409T106 MMVL409T1 |
Silicon Tuning Diode(调谐二极 VHF BAND, 29 pF, 20 V, SILICON, VARIABLE CAPACITANCE DIODE
|
ONSEMI[ON Semiconductor]
|
KDV214E |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(TV TUNING)
|
KEC[KEC(Korea Electronics)]
|
KDV287 |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(UHF SHF TUNING)
|
KEC[KEC(Korea Electronics)]
|
SVC203C09 |
Diffused Junction Type Silicon Diode Varactor Diode for FM Low-Voltage Electronic Tuning Use
|
Sanyo Semicon Device
|
SVC212 |
Varactor Diode (IOCAP) for FM Receiver Electronic Tuning Diffused Junction Type Silicon Diode
|
SANYO
|