| PART |
Description |
Maker |
| HCMS-2902 HCMS-2903 HCMS-2904 HCMS-2911 HCMS-2912 |
HCMS-2962 · High Performance CMOS 5 x 7 Alphanumeric Displays
HCMS-2961 · High Performance CMOS 5 x 7 Alphanumeric Displays
HCMS-2964 · High Performance CMOS 5 x 7 Alphanumeric Displays
HCMS-2963 · High Performance CMOS 5 x 7 Alphanumeric Displays
HCMS-2925 · High Performance CMOS 5 x 7 Alphanumeric Displays
HCMS-2924 · High Performance CMOS 5 x 7 Alphanumeric Displays
HCMS-2923 · High Performance CMOS 5 x 7 Alphanumeric Displays
HCMS-2922 · High Performance CMOS 5 x 7 Alphanumeric Displays
HCMS-2921 · High Performance CMOS 5 x 7 Alphanumeric Displays
HCMS-2915 · High Performance CMOS 5 x 7 Alphanumeric Displays
HCMS-2914 · High Performance CMOS 5 x 7 Alphanumeric Displays
HCMS-2913 · High Performance CMOS 5 x 7 Alphanumeric Displays
HCMS-2912 · High Performance CMOS 5 x 7 Alphanumeric Displays
HCMS-2911 · High Performance CMOS 5 x 7 Alphanumeric Displays
HCMS-2905 · High Performance CMOS 5 x 7 Alphanumeric Displays
HCMS-2904 · High Performance CMOS 5 x 7 Alphanumeric Displays
HCMS-2903 · High Performance CMOS 5 x 7 Alphanumeric Displays
HCMS-2902 · High Performance CMOS 5 x 7 Alphanumeric Displays
HCMS-2901 · High Performance CMOS 5 x 7 Alphanumeric Displays
HCMS-2975-HI000 · High Performance CMOS 5 x 7 Alphanumeric Displays
Bipolar Transistor; Collector Emitter Voltage, Vceo:350V; Transistor Polarity:NPN; Power Dissipation:1W; DC Current Gain Min (hfe):40; Collector Current:1A; Package/Case:3-TO-39; DC Current Gain Max (hfe):60; Terminal Type:5
T-PNP-SI-HV AF PWR AMP
High Performance CMOS 5 x 7 Alphanumeric Displays 高性能CMOS 5 × 7字母数字显示
|
http://
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Vishay Intertechnology, Inc.
|
| MP4304 |
Power Transistor Module Silicon NPN Epitaxial Type (high gain power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (high gain power transistor 4 in 1)
|
Toshiba Semiconductor
Toshiba Corporation
|
| IXBH42N170 |
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| L2SC3837T1G L2SC3837T3G |
High-Frequency Amplifier Transistor Small rbb Cc and high gain
|
Leshan Radio Company
|
| BFS483 Q62702-F1574 Q62702F1574 |
NPN Silicon RF Transistor (For low-noise/ high-gain broadband amplifier at colector current from 2mA to 28mA)
NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifier at colector current from 2mA to 28mA) NPN硅射频晶体管（对于低噪声，高增益的colector2mA至二十八毫安目前的宽带放大器
NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifier at colector current from 2mA to 28mA) 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
TRANSISTOR R.F SOT363
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| IXBH6N170 |
High Voltage, High Gain BIMOSFETMonolithic Bipolar MOS Transistor 12 A, 1700 V, N-CHANNEL IGBT, TO-247
|
IXYS, Corp.
|
| BUL642D2 |
High Speed, High Gain NPN Transistor
|
ON Semiconductor
|
| BUL44D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network
|
ON Semiconductor
|
| AGB3306S24Q1 AGB3306 AGB3306_REV_1.2 |
The AGB3306 is one of a series of high performance InGaP HBT amplifiers designed for use in applications requiring high linearity, ...
50W High Linearity Low Noise Wideband Gain Block
From old datasheet system
Gain Block Amplifiers
|
Anadigics Inc
ANADIGICS[ANADIGICS, Inc]
|
| BC516 Q62702-C944 |
PNP Silicon Darlington Transistor (High current gain High collector current)
From old datasheet system
|
Siemens Semiconductor G...
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| BFR106 Q62702-F1219 |
NPN Silicon RF Transistor (For low noise, high-gain amplifiers For linear broadband amplifiers) UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236
NPN Silicon RF Transistor (For low noise/ high-gain amplifiers For linear broadband amplifiers)
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
