| PART |
Description |
Maker |
| KP029J P0120009P |
2W GaAs Power FET (Pb-Free Type)
|
EUDYNA[Eudyna Devices Inc]
|
| KP028J |
1W GaAs Power FET (Pb-Free Type)
|
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
|
| KP024J P0120004P |
1.5W GaAs Power FET (Pb-Free Type)
|
EUDYNA[Eudyna Devices Inc]
|
| NES1821B-30 |
30W L-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
|
NEC Corp.
NEC[NEC]
|
| RJK0212DPA-00-J53 |
Silicon N Channel Power MOS FET Power Switching
25 A, 25 V, 0.0156 ohm, N-CHANNEL, Si, POWER, MOSFET HALOGEN FREE AND LEAD FREE, WPAK(2), 8 PIN
|
http://
|
| RJK03E2DNS-00-J5 |
16 A, 30 V, 0.0127 ohm, N-CHANNEL, Si, POWER, MOSFET 3.10 X 2.90 MM, HALOGEN FREE AND LEAD FREE, HWSON-8
Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| FLU17XM |
L BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET
L-Band Medium & High Power GaAs FET
|
FUJITSU LTD
EUDYNA[Eudyna Devices Inc]
|
| MGFK36V4045 |
RECTIFIER SCHOTTKY SINGLE 2A 100V 50A-Ifsm 0.79Vf 0.5A-IR SMB 3K/REEL
14.0-14.5GHz BAND 4W INTERNALLY MATCHED GaAs FET
14.0-14.5 GHz BAND 4W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
