PART |
Description |
Maker |
PSMN005-75P PSMN005-75B PSMN005_75P_75B-01 |
N-channel logic level field-effect power transistor in a plastic package using TrenchMOS technology. 75 A, 75 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB From old datasheet system N-channel enhancement mode field-effect transistor
|
NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
|
IRFF110 IRFF111 IRFF112 IRFF113 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 3.0A. N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.0A. Power MOS Field-Effect Transistors N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.5A.
|
General Electric Solid State GE Solid State
|
9C12063A10R0FKHFT ATC100B3R0BT500XT ATC100B4R3BT50 |
RF Power Field Effect Transistor
|
Freescale Semiconductor, Inc
|
MRF8S19140HR3 MRF8S19140HSR3 |
RF Power Field Effect Transistors
|
Freescale Semiconductor
|
MRF21125 MRF21125R3 MRF21125SR3 |
RF Power Field Effect Transistors
|
Freescale Semiconductor, Inc
|
MRF19125 MRF19125R3 MRF19125SR3 |
RF Power Field Effect Transistors
|
Freescale Semiconductor, Inc
|
VN30ABA VN35ABA |
Field Effect Power Transistor
|
General Electric Solid State
|
MRF19085 MRF19085LR3 MRF19085LSR3 |
RF Power Field Effect Transistors
|
Freescale Semiconductor, Inc
|
MTM15N20 MOTOROLAINC-MTM15N20 |
POWER FIELD EFFECT TRANSISTOR
|
Motorola, Inc
|