| PART |
Description |
Maker |
| W3H64M72E-667ES W3H64M72E-667ESI W3H64M72E-400ESI |
64M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package 64米72 DDR2 SDRAM08 PBGA封装多芯片封
|
Atmel, Corp.
Fujitsu, Ltd.
|
| W3H64M72E-400SBM W3H64M72E-533ES W3H64M72E-533ESC |
64M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package
|
WEDC[White Electronic Designs Corporation]
|
| W3H32M72E-400ES W3H32M72E-XSBX W3H32M72E-400ESC W3 |
32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package
|
WEDC[White Electronic Designs Corporation]
|
| EBE52UD6ABSA EBE52UD6ABSA-5C-E EBE52UD6ABSA-4A-E |
512MB DDR2 SDRAM SO-DIMM (64M words x 64 bits, 2 Ranks) 512MB的DDR2 SDRAM内存的SO - DIMM400字64位，2个等级）
512MB DDR2 SDRAM SO-DIMM (64M words x 64 bits, 2 Ranks) 64M X 64 DDR DRAM MODULE, 0.6 ns, DMA240
|
Elpida Memory, Inc.
|
| EDE1104ABSE-5C-E EDE1108ABSE-5C-E EDE1116ABSE-5C-E |
1G bits DDR2 SDRAM 128M X 8 DDR DRAM, 0.45 ns, PBGA68
1G bits DDR2 SDRAM 128M X 8 DDR DRAM, 0.6 ns, PBGA68
1G bits DDR2 SDRAM 64M X 16 DDR DRAM, 0.45 ns, PBGA92
1G bits DDR2 SDRAM 256M X 4 DDR DRAM, 0.5 ns, PBGA68
1G bits DDR2 SDRAM 1克位DDR2 SDRAM内存
|
Elpida Memory, Inc.
|
| EDE1108ACSE EDE1108ACSE-5C-E EDE1108ACSE-6E-E EDE1 |
64M X 16 SYNCHRONOUS DRAM, 0.4 ns, PBGA84
1G bits DDR2 SDRAM
|
ELPIDA MEMORY INC
|
| EBE52UD6AFSA-6E-E EBE52UD6AFSA EBE52UD6AFSA-4A-E E |
512MB DDR2 SDRAM SO-DIMM (64M words x 64 bits, 2 Ranks)
|
ELPIDA[Elpida Memory]
|
| EBE51RD8AEFA-5C-E EBE51RD8AEFA EBE51RD8AEFA-4A-E |
512MB Registered DDR2 SDRAM DIMM (64M words x 72 bits, 1 Rank)
|
ELPIDA[Elpida Memory]
|
| EBE51RD8AGFA-6E-E EBE51RD8AGFA-5C-E EBE51RD8AGFA-4 |
512MB Registered DDR2 SDRAM DIMM (64M words x 72 bits, 1 Rank)
|
Elpida Memory, Inc.
|
| HY5V66GF HY5V66GF-H HY5V66GF-P |
SDRAM - 64Mb
4 Banks x 1M x 16Bit Synchronous DRAM
4Mx16|3.3V|4K|H|SDR SDRAM - 64M
x16 SDRAM x16内存
|
Hynix Semiconductor
TT electronics Semelab, Ltd.
|
| AT91SAM9G45PRE |
DDR2 Controller 4-bank DDR2/LPDDR, SDRAM/LPSDR
|
ATMEL Corporation
|
