| PART |
Description |
Maker |
| GS880E32AT-250 |
512K x 18, 256K x 32, 256K x 36 9Mb Synchronous Burst SRAMs 256K X 32 CACHE SRAM, 5.5 ns, PQFP100
|
GSI Technology, Inc.
|
| GS88132BT-150IV |
512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs 256K X 32 CACHE SRAM, 7.5 ns, PQFP100
|
GSI Technology, Inc.
|
| IS61NP25632 IS61NP25636 IS61NP51218 IS61NP25632-5T |
256K x 32, 256K x 36 and 512K x 18 PIPELINE NO WAIT STATE BUS SRAM 512K X 18 ZBT SRAM, 4.2 ns, PBGA119
256K x 32, 256K x 36 and 512K x 18 PIPELINE NO WAIT STATE BUS SRAM 512K X 18 ZBT SRAM, 5 ns, PBGA119
256K x 32, 256K x 36 and 512K x 18 PIPELINE NO WAIT STATE BUS SRAM 256K X 32 ZBT SRAM, 4.2 ns, PBGA119
256K x 32, 256K x 36 and 512K x 18 PIPELINE NO WAIT STATE BUS SRAM 256K X 32 ZBT SRAM, 5 ns, PBGA119
256K x 32, 256K x 36 and 512K x 18 PIPELINE NO WAIT STATE BUS SRAM 256K X 32 ZBT SRAM, 5 ns, PQFP100
256K x 32, 256K x 36 and 512K x 18 PIPELINE NO WAIT STATE BUS SRAM 256K X 36 ZBT SRAM, 4.2 ns, PQFP100
Quadruple 2-Input Positive-OR Gates 14-SOIC -40 to 85 256K X 36 ZBT SRAM, 5 ns, PQFP100
Quadruple 2-Input Positive-OR Gates 14-SOIC -40 to 85 256K X 36 ZBT SRAM, 5 ns, PBGA119
256K x 32, 256K x 36 and 512K x 18 PIPELINE NO WAIT STATE BUS SRAM 256K X 36 ZBT SRAM, 4.2 ns, PBGA119
256K x 32, 256K x 36 and 512K x 18 PIPELINE NO WAIT STATE BUS SRAM 512K X 18 ZBT SRAM, 5 ns, PQFP100
256K x 32, 256K x 36 and 512K x 18 PIPELINE NO WAIT STATE BUS SRAM 256K X 32 ZBT SRAM, 4.2 ns, PQFP100
256K x 32, 256K x 36 and 512K x 18 PIPELINE NO WAIT STATE BUS SRAM 512K X 18 ZBT SRAM, 4.2 ns, PQFP100
256K x 32, 256K x 36 and 512K x 18 PIPELINE NO WAIT STATE BUS SRAM 256K × 3256K × 36和管道为512k × 18编号WAIT状态总线的SRAM
|
Integrated Silicon Solution, Inc.
INTEGRATED SILICON SOLUTION INC
|
| CY7C1355B-117BGI CY7C1355B-117BZC CY7C1355B-117BGC |
9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 9 - MB的（256 × 36/512K × 18）流体系结构，通过与总线延迟静态存储器
9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 7.5 ns, PBGA165
9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 6.5 ns, PBGA165
9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 7 ns, PQFP100
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| GS88032AT-166 GS88018AT-166 GS88036AT-166 GS88032A |
512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs 12k × 1856K × 3256K × 36 9Mb以上同步突发静态存储器
512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs 12k × 18256K × 32256K × 36 9Mb以上同步突发静态存储器
|
Electronic Theatre Controls, Inc.
|
| IS61NLP51218 IS61NP51218 |
256K x 32, 256K x 36 and 512K x 18 PIPELINE NO WAIT STATE BUS SRAM
|
Integrated Silicon Solu...
|
| F49L400BA |
4 Mbit (512K x 8/256K x 16) 3V Only CMOS Flash Memory 4兆位（为512k × 8/256K × 16V时仅闪存的CMOS
|
Elite Semiconductor Memory Technology, Inc.
|
| IS61LF51218A-7.5B3 IS61LF51218A-7.5B2 IS61LF51218A |
256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM 256K X 36 CACHE SRAM, 7.5 ns, PQFP100
|
Integrated Silicon Solution, Inc.
INTEGRATED SILICON SOLUTION INC
|
| GS88136AD-150 |
512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs 256K X 36 CACHE SRAM, 7.5 ns, PBGA165
|
GSI Technology, Inc.
|
| GS881E18BD-150V GS881E18BD-200IV GS881E18BGD-250V |
512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
|
GSI[GSI Technology]
|
| SMJ44C251B SMJ44C251B-10HJM SMJ44C251B-10HMM SMJ44 |
256K X 4 VRAM 256K x 4 DRAM with 512K x 4 SAM
|
Austin Semiconductor
|
|
