| PART |
Description |
Maker |
| HMC798LC4 |
GaAs MMIC SUB-HARMONIC SMT MIXER, 24 - 34 GHz
|
Hittite Microwave Corporation
|
| HMC264LC3B |
GaAs MMIC SUB-HARMONIC SMT MIXER, 21 - 31 GHz
|
Hittite Microwave Corporation
|
| HMC264LC3B |
GaAs MMIC SUB-HARMONIC SMT MIXER, 21 - 31 GHz
|
美国讯泰微波有限公司上海代表
|
| HMC338LC3B09 |
GaAs MMIC SUB-HARMONIC SMT MIXER, 24 - 34 GHz
|
Hittite Microwave Corporation
Hittite Microwave Corpo...
|
| BGA425 Q62702-G0058 Q62702-S497 Q62702-S633 Q62702 |
Si-MMIC-Amplifier in SIEGET 25-Technologie (Multifunctional casc. 50 Ω block LNA / MIX Unconditionally stable)
SI-MMIC-AMPLIFIER IN SIEGET 25-TECHNOLOGIE (MULTIFUNCTIONAL CASC. 50 ヘ BLOCK LNA / MIX UNCONDITIONALLY STABLE)
From old datasheet system
Si-MMIC-Amplifier in SIEGET 25-Technologie
Si-MMIC-Amplifier in SIEGET 25-Technologie (Multifunctional casc. 50 block LNA / MIX Unconditionally stable)
Si-MMIC-Amplifier in SIEGET 25-Technologie (Multifunctional casc. 50 block LNA / MIX Unconditionally stable)
SIPMOS Small-Signal Transistor (P channel Enhancement mode Logic Level) SIPMOS小信号晶体管P通道增强模式的逻辑电平
|
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| SFH420 SFH425 Q62702-P0330 Q62702-P1690 |
Mica Film Capacitor; Capacitance:33pF; Capacitance Tolerance: /- 5 %; Working Voltage, DC:300V
GaAs-IR-Lumineszenzdiode 0.5 in SMT-Gehuse GaAs Infrared Emitter in SMT Package
GaAs-IR-Lumineszenzdiode in SMT-Gehause GaAs Infrared Emitter in SMT Package
From old datasheet system
|
Siemens Semiconductor G...
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| HMC361G8 |
SMT GaAs HBT MMIC
|
Hittite Microwave Corporation
|
| HMC277MS806 |
GaAs MMIC SMT SINGLE GaAs MMIC SMT SINGLE
|
Hittite Microwave Corporation
|
| 365S8GE |
SMT GaAs HBT MMIC DIVIDE-BY-4, DC - 13.0 GHz
|
美国讯泰微波有限公司上海代表
|
| HMC363S8GE HMC363S8G09 |
SMT GaAs HBT MMIC DIVIDE-BY-8, DC - 12 GHz
|
Hittite Microwave Corporation
|
