| PART |
Description |
Maker |
| PGDS-50 |
10-80V or 6-100V Brown-out / Transient 600V Spike Suppression Module
|
List of Unclassifed Manufacturers
Electronic Theatre Controls, Inc.
ETC[ETC]
N.A.
|
| RFL1P08 RFL1P10 |
1 A, -80V and -100V, 3.65 Ohm, P-Channel Power MOSFETs
|
New Jersey Semi-Conductor P...
|
| RFL1N10 RFL1N08 |
1A, 80V and 100V, 1.200 Ohm, N-Channel, Power MOSFETs
1A/ 80V and 100V/ 1.200 Ohm/ N-Channel/ Power MOSFETs
1A 80V and 100V 1.200 Ohm N-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
|
| RFP12P10 |
12A, 80V and 100V, 0.300 Ohm, P-Channel Power MOSFETs
|
Fairchild Semiconductor
|
| RFP18N10 RFM18N08 RFM18N10 RFP18N08 |
18A/ 80V and 100V/ 0.100 Ohm/ N-Channel Power MOSFETs
18A, 80V and 100V, 0.100 Ohm, N-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
|
| 151-05 151-08 151-07 151-09 152-05 164-18 164-04 1 |
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 6A I(C) | TO-82
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 220V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 10A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 6A I(C) | TO-82
晶体管|晶体管|叩| 100V的五（巴西）总裁|甲一c）| STR-5/16
晶体管|晶体管|叩| 180V五（巴西）总裁|甲一c）| STR-5/16
晶体管|晶体管| npn型| 140伏特五（巴西）总裁|甲一c）| STR-5/16
晶体管|晶体管|叩| 50V五（巴西）总裁| 6A条一c）|2
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 100V的五（巴西）总裁| 7.5AI（丙）|个STR - 1 / 4
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管|叩| 60V的五（巴西）总裁|甲一c）| STR-5/16
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管|叩| 50V五（巴西）总裁|甲一（c）| STR-5/16
TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管|叩| 70V的五（巴西）总裁|甲一（c）| STR-5/16
|
Samsung Semiconductor Co., Ltd.
Molex, Inc.
Intel, Corp.
|
| IRFD9113 IRFD9110 |
(IRFD9110) P Channel Power MOSFET
-0.6A and -0.7A, -80V and -100V, 1.2 and 1.6 Ohm, P-Channel Power MOSFETs
|
Harris Corporation
|
| SB20-18 |
Schottky Barrier Diode (Twin Type Cathode Common) 80V, 2A Rectifier
80V/ 2A Rectifier
|
SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
|
| 2SB922L 2SD1238L 2SD1238LR 2SB922LS |
Dual/Triple-Voltage µP Supervisory Circuits
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 12A I(C)
80V/12A Switching Applications
|
SANYO[Sanyo Semicon Device]
|
| 2SD2309A 2SC3800 2SC3800Q 2SC3800R 2SD2011A 2SD230 |
TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 4A I(C) | SIP
TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 50MA I(C) | TO-92
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 2A I(C) | SIP 晶体管|晶体管|达林顿|叩| 100V的五（巴西）总裁|甲一（c）|园区
TRANSISTOR | BJT | DARLINGTON | NPN | 80V V(BR)CEO | 4A I(C) | SIP 晶体管|晶体管|达林顿|叩| 80V的五（巴西）总裁| 4A条一（c）|园区
TRANSISTOR | BJT | DARLINGTON | PNP | 100V V(BR)CEO | 2A I(C) | SIP 晶体管|晶体管|达林顿|进步党| 100V的五（巴西）总裁|甲一（c）|园区
TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 2A I(C) | TO-92
|
Avago Technologies, Ltd.
Atmel, Corp.
HIROSE ELECTRIC Co., Ltd.
|
| C7860M7628-3000 C7860M7628-1035 C7860M7628-1070 C7 |
INput current: 5A; 3Vdc: 80V; deuterium lamp
INput current: 10A; 0.8Vdc: 80V; deuterium lamp
INput current: 10A; 1.2Vdc: 80V; deuterium lamp
INput current: 15A; 0.5Vdc: 80V; deuterium lamp
INput current: 4A; 2.5Vdc: 80V; deuterium lamp
|
Hamamatsu Corporation
|
| AM29F200B-75FC AM29F200B-75SC AM29F200B-75EC AM29F |
20V Single N-Channel HEXFET Power MOSFET in a I-Pak package; A IRLU3714Z with Standard Packaging
80V Single N-Channel HEXFET Power MOSFET in a SO-8 package; A IRF7493 with Standard Packaging
x8/x16 Flash EEPROM
40V Single N-Channel HEXFET Power MOSFET in a D2Pak package; A IRL1404ZS with Standard Packaging
30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRL3803S with Lead Free Packaging
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package; Similar to IRF1405ZL with Lead Free Packaging
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRL540N with Standard Packaging
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package; Similar to IRFR024N with Lead Free Packaging
75V Single N-Channel HEXFET Power MOSFET in a I-Pak package; Similar to IRFU2407 with Lead Free Packaging
100V Single N-Channel HEXFET Power MOSFET in a D-Pak package; A IRFR3410 with Standard Packaging
75V Single N-Channel HEXFET Power MOSFET in a I-Pak package; A IRFU2407 with Standard Packaging
150V Single N-Channel Digital Audio HEXFET Power MOSFET in a TO-220AB package; A IRFB4019PBF with Standard Packaging
20V Single N-Channel HEXFET Power MOSFET in a TO-262 package; A IRF1302L with Standard Packaging
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package; A IRFR2405 with Standard Packaging
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; A IRF630NS with Tape and Reel Right Packaging
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package; A IRLR7843 with Standard Packaging
80V Single N-Channel HEXFET Power MOSFET in a I-Pak package; A IRFU3418 with Standard Packaging
100V Single N-Channel HEXFET Power MOSFET in a TO-262 package; A IRF540ZL with Standard Packaging
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRF540N with Standard Packaging
A 20V Single N-Channel HEXFET Power MOSFET in a DirectFET MP, 59 Amps
55V Single N-Channel HEXFET Power MOSFET in a I-Pak package; Similar to IRLU3705Z with Lead Free Packaging
30V Single N-Channel HEXFET Power MOSFET in a I-Pak package; Similar to IRLU3303 with Lead Free Packaging
55V Single N-Channel HEXFET Power MOSFET in a I-Pak package; A IRLU024Z with Standard Packaging
20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; A IRF3704ZCS with Standard Packaging
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRF630NS with Lead Free Packaging
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package; Similar to IRFZ46ZL with Lead Free Packaging
60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRFZ34VS with Lead Free Packaging
30V Single N-Channel HEXFET Power MOSFET in a TO-262 package; A IRL7833L with Standard Packaging
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRL3103 with Standard Packaging
12V Single N-Channel HEXFET Power MOSFET in a SO-8 package; Similar to IRF7476 with Lead Free Packaging x8/x16闪存EEPROM
100V Single N-Channel HEXFET Power MOSFET in a SO-8 package; A IRF7495 with Standard Packaging x8/x16闪存EEPROM
|
Advanced Micro Devices, Inc.
Aeroflex, Inc.
|
