| PART |
Description |
Maker |
| APT65GP60B2 |
MOSFET
POWER MOS 7 IGBT
|
Advanced Power Technology
http://
|
| APT50GP60S |
MOSFET
POWER MOS 7 IGBT
|
Advanced Power Technology
|
| APT11GP60BDQB |
POWER MOS 7 IGBT
MOSFET
|
Advanced Power Technolo...
Advanced Power Technology
|
| APT40GP60B2DF2 |
POWER MOS 7 IGBT
MOSFET
|
Advanced Power Technolo...
Advanced Power Technology
|
| APT13GP120K |
MOSFET
POWER MOS 7 IGBT
|
Advanced Power Technology
|
| APT80GP60B2 |
MOSFET
POWER MOS 7 IGBT
|
Advanced Power Technology
|
| APT45GP120B2DQ2 APT45GP120B2DQ2G |
113 A, 1200 V, N-CHANNEL IGBT
POWER MOS 7 IGBT
|
MICROSEMI POWER PRODUCTS GROUP
Advanced Power Technology
|
| APT50M60L2VR_04 APT50M60L2VR APT50M60L2VR04 |
77 A, 500 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET
POWER MOS V㈢ MOSFET
POWER MOS V? MOSFET
|
MICROSEMI[Microsemi Corporation]
|
| UPA1724 UPA1724G PA1724 UPA1724G-E1 UPA1724G-E2 |
N-channel enhancement type power MOS FET
MOS Field Effect Transistor
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
10 A, 20 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET
|
NEC[NEC]
|
| 2SK2981 2SK2981-Z 2SK2981-E1 2SK2981-T1 2SK2981-T2 |
Power MOSFET
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
MOS Field Effect Transistor
|
NEC[NEC]
NEC Corp.
|
| 2SK2983 D12357EJ1V0DS00 2SK2983-ZJ 2SK2983-S 2SK29 |
Low voltage 4V drive power MOSFET
MOS Field Effect Transistor
From old datasheet system
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
|
NEC[NEC]
|
| APT5010LLC APT5010B2LC APT5010B2LC-06 |
47 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS VI 500V 47A 0.100 Ohm
|
Advanced Power Technolo...
Advanced Power Technology Ltd.
|
