PART |
Description |
Maker |
IPP04N03LBG IPP04N03LBG08 |
OptiMOS2 Power-Transistor
|
Infineon Technologies AG
|
IPP06CN10LG |
OptiMOS2 Power-Transistor
|
Infineon Technologies AG
|
IPP05N03LBG IPP05N03LBG08 |
OptiMOS2 Power-Transistor
|
Infineon Technologies AG
|
IPB06N03LB |
OptiMOS2 Power-Transistor 的OptiMOS2功率晶体
|
Infineon Technologies AG
|
BSR202N |
OptiMOS2 Small-Signal-Transistor
|
Infineon Technologies AG
|
BSB053N03LPG |
OptiMOS2 Power-MOSFET
|
Infineon Technologies AG
|
BSF083N03LQG |
OptiMOS2 Power-MOSFET
|
Infineon Technologies AG
|
BSC052N03S |
OptiMOS2 Power-Transistor
|
Infineon Technologies A...
|
IPU07N03LA |
OptiMOS®2 - Power packages OptiMOS2 Power MOSFET. 25V. TO251. RDSon = 6.5mOhm. 30A. LL ?的OptiMOS功率MOSFET25V的TO251。导通状态\u003d 6.5mOhm30A条。当地雇员?
|
Infineon Toshiba, Corp.
|
BSR802N |
Optimos2 Small-Signal-Tansistor N-channel Avalanche rated
|
TY Semiconductor Co., L...
|