PART |
Description |
Maker |
RT9266 RT9266CE |
Tiny Package, High Efficiency, Step-up DC/DC Converter Input Volt. Range(V) = 1~6.5 ;; Output Volt. Range(V) = Adjustable ;;
|
RICHTEK
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X28HC256P-12 X28HC256P-15 X28HC256J-90 X28HC256S-1 |
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 150 ns, PDSO28 5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 120 ns, CPGA28 5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, CQCC32 SWITCH SLIDE 2MM HORIZONTAL SMD 32K X 8 EEPROM 5V, 90 ns, CDIP28 5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, CDIP28 5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, CDIP28 5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, PDIP28 5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, PDSO28 5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, PDSO28 5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, PDIP28 RACK DESK SOLID BLACK 1.75X19X8,1 32K X 8 EEPROM 5V, 70 ns, CPGA28 5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, PQCC32 5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, CPGA28 Continuity Tester RoHS Compliant: NA 32K X 8 EEPROM 5V, 90 ns, PQCC32 5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, PQCC32 5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, CDFP28 5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, CQCC32 Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 1000uF; Voltage: 50V; Case Size: 12.5x25 mm; Packaging: Bulk
|
Intersil, Corp. Intersil Corporation
|
AT49BV8011 AT49BV8011-12CI AT49LV8011 AT49LV8011-9 |
8M bit. 2.7-Volt Read and 2.7-Volt Byte-Write Sectored Flash. Bottom Boot 800万位2.7伏读取和2.7伏字节写扇区闪存。底部启 x8/x16 Flash EEPROM x8/x16闪存EEPROM 8-megabit (512K x 16/1M x 8) 3-volt Only Flash Memory
|
3M Company Atmel, Corp. AMIC Technology, Corp. Advanced Micro Devices, Inc. ATMEL[ATMEL Corporation]
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AT49BV2048 |
2-Megabit 3-volt Only Flash Memory(2M浣?3V???瀛???ī 2M bit. 2.7-Volt Read and 2.7-Volt Write. Byte-Write Flash. Bottom Boot
|
Atmel Corp.
|
V43648S04VTG-10PC |
3.3 Volt 8M x 64 High Performance PC100 SDRAM Module with Unbuffered(3.3V 8M*64位高性能无缓冲器PC100 SDRAM模块) 3.3 Volt 8M x 64 High Performance PC100 SDRAM Module with Unbuffered(3.3V 8M*64浣???ц?????插?PC100 SDRAM妯″?)
|
Mosel Vitelic, Corp.
|
IDT72T3675L4BB IDT72T3685L7BBI IDT72T3695L5BBI IDT |
2.5 VOLT HIGH-SPEED TeraSyncTM FIFO 36-BIT CONFIGURATIONS 8K X 36 OTHER FIFO, 3.6 ns, PBGA208 2.5 VOLT HIGH-SPEED TeraSyncTM FIFO 36-BIT CONFIGURATIONS 2.5伏高速TeraSyncTM FIFO6位配
|
Integrated Device Technology, Inc. Integrated Device Techn...
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AM29SL800B AM29SL800BB170EC AM29SL800BB170ECB AM29 |
High Speed CMOS Logic Octal Inverting Bus Transceiver with 3-State Outputs 20-CDIP -55 to 125 8-Bit Identity/Magnitude Comparators (P=Q) with Enable 20-CDIP -55 to 125 High Speed CMOS Logic Quad 2-Input EXCLUSIVE OR Gates 14-CDIP -55 to 125 4-Bit Magnitude Comparator 16-CDIP -55 to 125 High Speed CMOS Logic Dual Positive-Edge Trigger D Flip-Flops with Set and Reset 14-CDIP -55 to 125 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 1M X 8 FLASH 1.8V PROM, 200 ns, PBGA48 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 8兆位 M中的x 8-Bit/512亩x 16位).8伏的CMOS只超低电压快闪记忆体 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 1M X 8 FLASH 1.8V PROM, 170 ns, PDSO48 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 1M X 8 FLASH 1.8V PROM, 200 ns, PDSO48
|
Advanced Micro Devices, Inc.
|
AT29LV256NBSP AT29LV256 |
256K, 3-Volt Read and 3-Volt Write Flash From old datasheet system
|
Atmel Corp
|
DS1691 DS1688 |
3 Volt/5 Volt Serialized Real-Time Clock with NV RAM Control
|
MAXIM - Dallas Semiconductor
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DS1693 |
3-Volt/5-Volt Serialized Real-Time Clock with NV RAM Control
|
TE Connectivity, Ltd.
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