PART |
Description |
Maker |
PTF180601 PTF180601C PTF180601E |
LDMOS Field Effect Transistor 60 W, DCS/PCS Band 1805-1880 MHz, 1930-1990 MHz LDMOS的场效应晶体0瓦,DCS / PCS的兆赫波8050年,1930-1990兆赫 LDMOS Field Effect Transistor 60 W DCS/PCS Band 1805-1880 MHz 1930-1990 MHz LDMOS Field Effect Transistor 60 W/ DCS/PCS Band 1805-1880 MHz/ 1930-1990 MHz
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INFINEON[Infineon Technologies AG]
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AGR19060E AGR19060EF AGR19060EU |
60 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor
|
TriQuint Semiconductor
|
1920A12 |
12 W, 25 V, 1930-1990 MHz common emitter transistor
|
GHz Technology
|
1920AB25 |
25 W, 25 V, 1930-1990 MHz common emitter transistor
|
GHz Technology
|
PTF180601 |
LDMOS Field Effect Transistor 60 W, DCS/PCS Band 1805-1880 MHz, 1930-1990 MHz
|
Infineon Technologies A...
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DSW1064-A |
1930 MHz - 1990 MHz RF/MICROWAVE ISOLATOR
|
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PH1920-45 |
WIRELESS BIPOLAR POWER TRASISTOR 45W 1930-1990 MHZ
|
Tyco Electronics
|
PTF180101 PTF180101S |
LDMOS RF Power Field Effect Transistor 10 W 1805-1880 MHz 1930-1990 MHz 10 W 2110-2170 MHz LDMOS RF Power Field Effect Transistor 10 W, 1805-1880 MHz, 1930-1990 MHz 10 W, 2110-2170 MHz LDMOS RF Power Field Effect Transistor 10 W/ 1805-1880 MHz/ 1930-1990 MHz 10 W/ 2110-2170 MHz
|
INFINEON[Infineon Technologies AG]
|
PTF191601 PTF191601E |
LDMOS RF Power Field Effect Transistor 160 W/ 1930-1990 MHz LDMOS RF Power Field Effect Transistor 160 W, 1930-1990 MHz
|
INFINEON[Infineon Technologies AG]
|
PTFA191001E PTFA191001F |
Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1930-1990 MHz
|
Infineon Technologies AG
|
1920AB35 |
35 W, 25 V, 1930-1990 MHz common emitter transistor TRANSISTOR | BJT | NPN | 27V V(BR)CEO | 14A I(C) | FO-91VAR
|
GHz Technology
|
CU42JB1P-1950-1T CU48RA5L-250-2T CU49PB3L-600-6C C |
1900 MHz - 2000 MHz RF/MICROWAVE ISOLATOR 100 MHz - 400 MHz RF/MICROWAVE ISOLATOR 400 MHz - 800 MHz RF/MICROWAVE 3 PORT CIRCULATOR 1930 MHz - 1990 MHz RF/MICROWAVE ISOLATOR
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