| PART |
Description |
Maker |
| FLU17XM |
L BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET
L-Band Medium & High Power GaAs FET
|
FUJITSU LTD
EUDYNA[Eudyna Devices Inc]
|
| NE650049600 |
L&S BAND MEDIUM POWER GaAs MESFET
|
NEC
|
| NE650107700 |
L/S BAND MEDIUM POWER GaAs MESFET
|
California Eastern Labs
|
| NE850R599A NE850R59 |
C-BAND MEDIUM POWER GaAs MESFET
|
California Eastern Labs
NEC
|
| FLL107ME |
L-Band Medium & High Power GaAs FET
|
Eudyna Devices Inc
|
| FLL351ME |
L-band medium & high power gaas FTEs
|
Fujitsu Component Limited.
Fujitsu Limited
FUJITSU[Fujitsu Media Devices Limited]
Fujitsu Microelectronics
|
| HMC498LC409 |
GaAs PHEMT MEDIUM POWER AMPLIFIER, 17 - 24 GHz
|
http://
|
| TC1101 |
Low Noise and Medium Power GaAs FETs
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| TC1101 |
Low Noise and Medium Power GaAs FETs
|
Transcom, Inc.
|
| FLL600IQ-3 |
L-Band Medium & High Power GaAs FET
|
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
|
| HMC28308 HMC28307 HMC283 |
GaAs MMIC MEDIUM POWER AMPLIFIER, 17 - 40 GHz
|
Hittite Microwave Corpo...
Hittite Microwave Corporation
|
