| PART |
Description |
Maker |
| M50LPW040N5T M50LPW040 M50LPW040K M50LPW040K1T M50 |
From old datasheet system
4 Mbit 512Kb x8, Uniform Block 3V Supply Low Pin Count Flash Memory
4 MBIT (512KB X8, UNIFORM BLOCK) 3V SUPPLY LOW PIN COUNT FLASH MEMORY
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M29F04B45K1 M29F04B45K1E M29F04B45K1F M29F04B45K1T |
4 Mbit (512Kb x8, Uniform Block) Single Supply Flash Memory
|
STMICROELECTRONICS[STMicroelectronics]
|
| M29W040 M29W040-100K1R M29W040-100K1TR M29W040-100 |
4 Mbit 512Kb x8 / Uniform Block Low Voltage Single Supply Flash Memory
4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| M29F040B45K1T M29F040B55K1T M29F040B70K1T M29F040B |
4 Mbit (512Kb x8, Uniform Block) Single Supply Flash Memory 4兆位12KB的8，统一座）单电源闪
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| M36W0R6030T0ZAQ M36W0R6030B0ZAQ M36W0R6030B0 M36W0 |
64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package
|
http://
STMicroelectronics
|
| M29W128GH70N3E M29W128GL |
128-Mbit (16 Mbit x8 or 8 Mbit x16, page, uniform block) 3 V supply flash memory
128-Mbit (16 Mbit x8 or 8 Mbit x16, page, uniform block) 3 V supply flash memory
|
Numonyx B.V
|
| M29W400DT M29W400DT45M1E M29W400DT45M1F M29W400DT4 |
4 Mbit (512Kb x8 or 256Kb x16 Boot Block) 3V Supply Flash Memory
4 Mbit (512Kb x8 or 256Kb x16 / Boot Block) 3V Supply Flash Memory
4 Mbit (512Kb x8 or 256Kb x16, Boot Block) 3V Supply Flash Memory 4兆位12KB的x856Kb的x16插槽，引导块V电源快闪记忆
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
意法半导
STMicroelectronics N.V.
|
| M27W400 M27W400-100B6TR M27W400-100F6TR M27W400-10 |
4 Mbit (512Kb x8 or 256Kb x16), Low Voltage UV EPROM and OTP EPROM
512K X 8 UVPROM, 100 ns, CDIP40
4 Mbit 512Kb x8 or 256Kb x16 Low Voltage UV EPROM and OTP EPROM 4兆位512KB的x856Kb的x16低压紫外线可擦写可编程只读存储器和OTP存储
256 Kbit 32Kb x 8 Low Voltage UV EPROM and OTP EPROM
|
SGS Thomson Microelectronics
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M27W401 M27W401-100B6TR M27W401-100F6TR M27W401-10 |
4 Mbit (512Kb x 8) Low Voltage UV EPROM and OTP EPROM
Quadruple 1-of-2 Data Selectors/Multiplexers 16-SOIC 0 to 70 4兆位512KB的8低压紫外线可擦写可编程只读存储器和OTP存储
4 Mbit 512Kb x 8 Low Voltage UV EPROM and OTP EPROM 4兆位512KB的8低压紫外线可擦写可编程只读存储器和OTP存储
Quadruple 1-of-2 Data Selectors/Multiplexers 16-PDIP 0 to 70 4兆位512KB的8低压紫外线可擦写可编程只读存储器和OTP存储
Quadruple 1-of-2 Data Selectors/Multiplexers 16-SO 0 to 70 4兆位512KB的8低压紫外线可擦写可编程只读存储器和OTP存储
4 Mbit 512Kb x8 or 256Kb x16 Low Voltage UV EPROM and OTP EPROM
|
SGS Thomson Microelectronics
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| W25X20LSNCG W25X20VSNI W25X10LDACG W25X20VZPIZ |
4 Mbit Uniform Sector, Serial Flash Memory 2M X 1 FLASH 2.7V PROM, PDSO8
4 Mbit Uniform Sector, Serial Flash Memory 1M X 1 FLASH 2.7V PROM, PDIP8
4 Mbit Uniform Sector, Serial Flash Memory 2M X 1 FLASH 2.7V PROM, DSO8
|
Winbond Electronics, Corp.
|
| M29W004BT M29W004BT55N6T |
4 Mbit 512Kb x8 / Boot Block Low Voltage Single Supply Flash Memory
4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory 4兆位512KB的8，启动块低压单电源闪
|
ST Microelectronics
STMicroelectronics N.V.
|
