PART |
Description |
Maker |
GS8170DD18GC-333IT GS8170DD18C-333I GS8170DD18C-25 |
333MHz 1M x 18 18MB double data rate sigmaRAM SRAM 300MHz 1M x 18 18MB double data rate sigmaRAM SRAM 250MHz 1M x 18 18MB double data rate sigmaRAM SRAM 1M X 18 STANDARD SRAM, 1.6 ns, PBGA209
|
GSI TECHNOLOGY
|
GS8170DD36C-333 GS8170DD36C-250 GS8170DD36C-300 GS |
18Mb x2Lp CMOS I/O Double Data Rate SigmaRAM 512K X 36 STANDARD SRAM, 2.1 ns, PBGA209 18Mb 1x2Lp CMOS I/O Double Data Rate SigmaRAM 35.71x2Lp的CMOS的I / O双数据速率SigmaRAM
|
GSI Technology, Inc.
|
K4D623238B-GQC |
512K x 32Bit x 4 Banks Double Data Rate Synchronous RAM wi Extended Data Out Data Sheet
|
Samsung Electronic
|
K4D26323RA-GC |
1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL Data Sheet
|
Samsung Electronic
|
DDR110-56T7RL DDR110-XXT7RL DDR110-27T7RL |
10-LINE 56 ohm OTHER TERMINATOR, PDSO24 DOUBLE DATA RATE TERMINATION NETWORK WITH DISABLE SWITCH 双倍数据速率终端网络具有禁用开 DOUBLE DATA RATE TERMINATION NETWORK WITH DISABLE SWITCH
|
STMicroelectronics N.V. STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
|
M13L2561616A-2A |
Double-data-rate architecture, two data transfers per clock cycle
|
Elite Semiconductor Mem...
|
NT5DS4M32EG-5 NT5DS4M32EG-5G NT5DS4M32EG-6 |
1M × 32 Bits × 4 Banks Double Data Rate Synchronous RAM With Bi-Directional Data Strobe and DLL
|
NanoAmp Solutions, Inc.
|
K4D263238M K4D263238M-QC45 K4D263238M-QC50 K4D2632 |
1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
MT46V64M8 MT46V64M8P-5BF MT46V32M16 MT46V32M16P-6T |
Double Data Rate (DDR) SDRAM 512Mb: x4, x8, x16 Double Data Rate (DDR) SDRAM SDRAM Features 512Mb: x4, x8, x16 Double Data Rate SDRAM Features
|
Alliance Semiconductor ... Micron Technology
|
MT46V32M16TG-75 MT46V32M16TG-75L MT46V32M16TG-75Z |
DOUBLE DATA RATE DDR SDRAM
|
Micron Technology
|
HYB18T1G800BF-2.5 HYB18T1G800BF-2.5F HYB18T1G800BF |
1-Gbit Double-Data-Rate-Two SDRAM
|
Qimonda AG
|