| PART |
Description |
Maker |
| IDT72V3644 IDT72V3624 IDT72V3634 IDT72V3634L10 IDT |
512 x 36 x 2 SyncBiFIFO, 3.3V
3.3 VOLT CMOS SyncBiFIFO?
3.3 VOLT CMOS SyncBiFIFO WITH BUS-MATCHING 256 x 36 x 2, 512 x 36 x 2, 1,024 x 36 x 2
|
IDT[Integrated Device Technology]
Integrated Device Techn...
|
| IDT72V3694 IDT72V3694L10PF IDT72V3694L15PF IDT72V3 |
32K x 36 x 2 SyncBiFIFO, 3.3V
3.3 VOLT CMOS SyncBiFIFOTM WITH BUS-MATCHING 3.3伏的CMOS SyncBiFIFOTM与巴士线匹配
Low Cost 3-Channel Video Filter Drivers for SD/PS/HD; Package: TSSOP; No of Pins: 14; Container: Rail
|
IDT
Integrated Device Technology, Inc.
|
| IDT723644 IDT723624 |
CMOS SyncBiFIFOTM WITH BUS-MATCHING
CMOS SyncBiFIFO?
|
IDT[Integrated Device Technology]
|
| AM28F010A AM28F010A-120EC AM28F010A-120ECB AM28F01 |
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory with Embedded Algorithms
0.5MM, ZIF, SMT, 42 POSITION, EMBOSS TAPE T&R RoHS Compliant: Yes
CAP 100PF 1500V 20% NP0(C0G) SMD-1808 TR-13 PLATED-NI/SN
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位）CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位28亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 200 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 120 ns, PDSO32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 90 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 150 ns, PDSO32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PDSO32
|
Advanced Micro Devices, Inc.
SPANSION LLC
ADVANCED MICRO DEVICES INC
|
| RC86L60-3 RC8660 RC8660-1 RC86L60-1 RC86L60-2 |
CMOS, 3.3 Volt / 5 Volt Voice Synthesizer Chipset
|
ETC[ETC]
|
| S29CD-J S29CL032J S29CD016J S29CD016J0JFAI000 S29C |
32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O
|
SPANSION[SPANSION]
|
| S29AL008D55TFN023 S29AL008D70TFN023 S29AL008D70TFI |
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 512K X 16 FLASH 3V PROM, 70 ns, PDSO44
CONNECTOR ACCESSORY 连接器附
CONNECTOR ACCESSORY 512K X 16 FLASH 3V PROM, 90 ns, PDSO48
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 512K X 16 FLASH 3V PROM, 90 ns, PDSO44
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 8兆位 M中的x 8-Bit/512x 16位）.0伏的CMOS只引导扇区闪
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 512K X 16 FLASH 3V PROM, 70 ns, PBGA48
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 8兆位1 M中的x 8-Bit/512亩x 16位）.0伏的CMOS只引导扇区闪
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 512K X 16 FLASH 3V PROM, 55 ns, PBGA48
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 8兆位 M中的x 8-Bit/512亩x 16位）.0伏的CMOS只引导扇区闪
JT 16C 16#16 PIN RECP
CAP 0.015UF 50V 80-20% Z5U SMD-0805 TR-7-PL SN-NIBAR
SSR OCMOS FET 200MA NO 6-SOIC
|
SPANSION LLC
Spansion, Inc.
Spansion Inc.
|
| IDT72V201L20J IDT72V201L20JI IDT72V211L20J IDT72V2 |
512 x 9 SyncFIFO, 3.3V
3.3 VOLT CMOS SyncFIFO 256 x 9, 512 x 9, 1,024 x 9, 2,048 x 9, 4,096 x 9 and 8,192 x 9
3.3 VOLT CMOS SyncFIFO⑩ 256 x 9, 512 x 9, 1,024 x 9, 2,048 x 9, 4,096 x 9 and 8,192 x 9
GT 11C 11#16 SKT RECP BOX RM
3.3 VOLT CMOS SyncFIFO 256 x 9/ 512 x 9/ 1/024 x 9/ 2/048 x 9/ 4/096 x 9 and 8/192 x 9
3.3 VOLT CMOS SyncFIFO256 x 9, 512 x 9, 1,024 x 9, 2,048 x 9, 4,096 x 9 and 8,192 x 9 3.3伏的CMOS SyncFIFO56 × 912 × 9,024 × 9,048 × 9,096 × 9,192 × 9
GT 6C 3#4 3#16 SKT RECP WALL 1K X 9 OTHER FIFO, 6.5 ns, PQCC32
GT 7C 7#16S PIN RECP
3.3 VOLT CMOS SyncFIFO??256 x 9, 512 x 9, 1,024 x 9, 2,048 x 9, 4,096 x 9 and 8,192 x 9
GT 8C 8#16 SKT RECP WALL
GT 3C 3#16S PIN RECP WALL
GT 4C 4#12 PIN PLUG
3.3 VOLT CMOS SyncFIFO?256 x 9, 512 x 9, 1,024 x 9, 2,048 x 9, 4,096 x 9 and 8,192 x 9
|
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
INTEGRATED DEVICE TECHNOLOGY INC
Integrated Device Techn...
|
| AMD29F010B AM29F010B-90PI AMD29F010B-45EE AMD29F01 |
1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only / Uniform Sector Flash Memory
20V Single N-Channel HEXFET Power MOSFET in a Micro 3 package; A IRLML2402 with Tape and Reel Packaging
1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory 1兆位28亩8位）的CMOS 5.0伏只，统一部门快闪记忆
1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory 1兆位128亩8位）的CMOS 5.0伏只，统一部门快闪记忆
|
Advanced Micro Devices, Inc.
|
| FAN2508 FAN2509S25 FAN2509S30 FAN2509S285 FAN2508X |
50 mA CMOS LDO Regulators
VOLT REGULATOR|FIXED| 2.5V|CMOS|TSOP|6PIN|PLASTIC
VOLT REGULATOR|FIXED| 3V|CMOS|TSOP|6PIN|PLASTIC
VOLT REGULATOR|FIXED| 2.85V|CMOS|TSOP|6PIN|PLASTIC
|
Fairchild Semiconductor
|
| AM29LV081B AM29LV081B-120EC AM29LV081B-120ECB AM29 |
8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Sector Erase Flash Memory
Gate Driver; Package: PG-DSO-8; RthJA (max): -;
8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Sector Erase Flash Memory 8兆位米8位）的CMOS 3.0伏特，只有扇区擦除闪
CORECONTROL™ Gate Driver 1M X 8 FLASH 3V PROM, 70 ns, PDSO40
8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Sector Erase Flash Memory 1M X 8 FLASH 3V PROM, 70 ns, PDSO40
8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Sector Erase Flash Memory 8兆位1米8位）的CMOS 3.0伏特，只有扇区擦除闪
|
AMD[Advanced Micro Devices]
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
|
