| PART |
Description |
Maker |
| MGR1018_D ON1879 MGR1018 |
Power Manager Gallium Arsenide Power Rectifier
From old datasheet system
GALLIUM ARSENIDE RECTIFIER 10 AMPERES 180 VOLTS
|
MOTOROLA[Motorola, Inc]
ON Semi
|
| MGR2025CT MGR2025CT_D ON1881 |
From old datasheet system
GALLIUM ARSENIDE RECTIFIER 20 AMPERES 250 VOLTS
Power Manager Gallium Arsenide Power Rectifier
|
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
ON Semi
|
| DGS10-025AS DGS10-022AS |
Gallium Arsenide Schottky Rectifier
|
IXYS[IXYS Corporation]
|
| ML4641-186 ML4962-275 ML4962-138 ML4520-30 ML4520- |
300 V, SILICON, PIN DIODE
40 GHz - 50 GHz, GALLIUM ARSENIDE, GUNN DIODE
KA BAND, 5.5 pF, 30 V, GALLIUM ARSENIDE, ABRUPT VARIABLE CAPACITANCE DIODE
150 V, SILICON, PIN DIODE
27 GHz - 32 GHz, GALLIUM ARSENIDE, GUNN DIODE
|
|
| ATF-10236 ATF-10236-STR ATF-10236-TR1 ATF10236 |
ER 2C 2#16S PIN RECP BOX
0.5?12 GHz Low Noise Gallium Arsenide FET
0.5-12 GHz Low Noise Gallium Arsenide FET
0.512 GHz Low Noise Gallium Arsenide FET
|
HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
|
| PSA08-11EWA |
The High Efficiency Red source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Orange Light Emitting Diode.
|
KINGBRIGHT[Kingbright Corporation]
|
| ATF-10736 ATF-10736-STR ATF-10736-TR1 ATF-10736-TR |
0.5-12 GHz General Purpose Gallium Arsenide FET
0.5?12 GHz General Purpose Gallium Arsenide FET
0.512 GHz General Purpose Gallium Arsenide FET
|
Agilent(Hewlett-Packard)
Agilent (Hewlett-Packard)
|
| DGSK40-025CS DGS19-025CS |
31 A, 250 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-263AB PLASTIC PACKAGE-4
31 A, 250 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-252AA PLASTIC PACKAGE-4
|
IXYS, Corp.
|
| D5006-24 D5006-36 DVF4559-04 |
60 GHz, GALLIUM ARSENIDE, STEP RECOVERY DIODE
130 GHz, GALLIUM ARSENIDE, STEP RECOVERY DIODE
|
SKYWORKS SOLUTIONS INC
|
| MRFG35010ANT1 |
Gallium Arsenide PHEMT
|
Freescale Semiconductor, Inc
|
| OH10014 |
Gallium Arsenide Devices
|
Panasonic
|
