| PART |
Description |
Maker |
| GT8G131 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS
N CHANNEL MOS TYPE (STROBE FLASH APPLICATIONS)
|
Toshiba Semiconductor
|
| 2SC3072 |
TRANSISTOR (STROBE FLASH/ MEDIUM POWER AMPLIFIER APPLICATIONS)
Transistor Silicon NPN Epitaxial Type (PCT process) Strobe Flash Applications Medium Power Amplifier Applications
|
Toshiba Semiconductor
|
| GT8G10306 |
STROBE FLASH APPLICATIONS
|
Toshiba Semiconductor
|
| GT8G12106 |
STROBE FLASH APPLICATIONS
|
Toshiba Semiconductor
|
| RJP5001APP-00-T2 RJP5001APP |
Nch IGBT for Strobe Flash
|
Renesas Electronics Corporation
|
| RJP4009ANS RJP4009ANS-15 |
Nch IGBT for Strobe Flash
|
Renesas Electronics Corporation
|
| RJP5001APP-M0-15 |
Nch IGBT for Strobe Flash
|
Renesas Electronics Corporation
|
| GT25G102 |
N CHANNEL IGBT (STROBE FLASH APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| GT8G134 |
Silicon N Channel IGBT Strobe Flash Applications
|
Toshiba Semiconductor
|
| FGR15N40A |
Strobe Flash N-Channel Logic Level IGBT
|
FAIRCHILD[Fairchild Semiconductor]
|
