| PART |
Description |
Maker |
| IRG4BC40FPBF |
Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT
|
International Rectifier
|
| IRG4MC30F |
Fast Speed IGBT - INSULATED GATE BIPOLAR TRANSISTOR
|
International Rectifier
|
| IRG4PC60F-PPBF |
INSULATED GATE BIPOLAR TRANSISTOR (Fast Speed IGBT)
|
International Rectifier
|
| IRG4PC40FPBF |
INSULATED GATE BIPOLARTRANSISTOR Fast Speed IGBT 绝缘栅BIPOLARTRANSISTOR IGBT的速度
|
International Rectifier, Corp.
|
| APT46GA90JD40 |
High Speed PT IGBT
Insulated Gate Bipolar Transistor - Power MOS 8; Package: ISOTOP®; BV(CES) (V): 900; VCE(sat) (V): 2.5; IC (A): 46; 87 A, 900 V, N-CHANNEL IGBT
|
Microsemi Corporation
Microsemi, Corp.
|
| GA200TS60U |
HALF-BRIDGE IGBT INT-A-PAK Ultra-Fast Speed IGBT
|
IRF[International Rectifier]
|
| IRG4BC40SPBF |
INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT
|
IRF[International Rectifier]
|
| IRG4BC40UPBF |
INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT
|
IRF[International Rectifier]
|
| GA200NS61U |
600V UltraFast 10-30 kHz Hs Chop S IGBT in a INT-A-Pak package
High Side Switch Chopper Module Ultra-Fast Speed IGBT
|
IRF[International Rectifier]
|
| RM100HA-XXF |
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| RM50HA-XXF |
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
