| PART |
Description |
Maker |
| ISL59444IB-T13 ISL59444IB-T7 ISL59444IBZ ISL59444I |
1GHz, 4 x 1 Multiplexing Amplifier with Synchronous Controls
|
Intersil Corporation
|
| ISL59445IR ISL59424IR ISL59424IR-T13 ISL59424IR-T7 |
1GHz Triple Multiplexing Amplifiers
From old datasheet system
|
Intersil Corporation
|
| PE4246 |
Absorbtive SPST ;Operating Frequency (MHz) = DC - 5000 ;; P1dB (dBm) = 33 ;; Insertion Loss (dB, 1GHz) = 0.80 ;; ISOlation (dB, 1GHz) = 55 ;6L MLPM
|
PEREQRINE
|
| D2282UK |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(750W-6V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应750W-6V-1GHz,单端)
|
SemeLAB
SEME-LAB[Seme LAB]
|
| D2212 D2212UK D2002 D2005 |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(10W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应10W-12.5V-1GHz,单端)
|
SemeLAB
SEME-LAB[Seme LAB]
|
| D2002UK |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-28V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应5W-28V-1GHz,单端)
|
SemeLAB
Seme LAB
|
| 310-025103-012 |
Filtered Low Noise Ampli er
|
Spectrum Microwave, Inc.
|
| 310-025105-012 |
Filtered Low Noise Ampli er
|
Spectrum Microwave, Inc.
|
| 310-025105-021 |
Filtered Low Noise Ampli er
|
Spectrum Microwave, Inc.
|
| D2001UK |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(2.5W-28V-1GHz,Single Ended)(???澶??DMOS灏??纭?????绠?2.5W-28V-1GHz,???寮?)
|
SemeLAB
SEME-LAB[Seme LAB]
|
| 2N526 |
PNP germanium transistor for switching and ampli-fier applications in the audio-frequency range
|
New Jersey Semi-Conductor Products, Inc.
|
