| PART |
Description |
Maker |
| 1N6515U 1N6517U 1N6513U 1N6513 |
2000 V - 10000 V Rectifiers 0.5 A - 2.0 A Forward Current 70 ns Recovery Time
2000 V - 5000 V Rectifiers
2,000 V - 5,000 V Rectifiers
|
ETC[ETC]
|
| 1N6521U 1N6525U 1N6523U |
2,000 V - 5,000 V Rectifiers
2000 V - 5000 V Rectifiers
|
ETC[ETC]
|
| CFB949AQ CFD1275AQ CFB949AP CFD1275AP CFD1275R CFB |
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFD1275AQ
2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFB949AQ
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFD1275AP
2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFB949AP
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 2500 hFE. Complementary CFB949R
2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFD1275
2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFD1275P
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFD1275AR
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFD1275A
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFB949
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFB949Q
|
Continental Device India Limited
|
| 5.0SMLJ90A 5.0SMLJ100A 5.0SMLJ110A 5.0SMLJ11A 5.0S |
Transient Voltage Suppressor 11 to 170 Volts 5000 Watt 5000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB
|
Micro Commercial Compon...
MCC[Micro Commercial Components]
Micro Commercial Components Corp.
Micro Commercial Components, Corp.
|
| EB-ASG304-CATV EB-ASG304-1750 EB-ASG304-IF ASG304 |
DC-2000 MHz SiGe HBT Amplifier 的DC - 2000 MHzSiGe HBT的放大器
From old datasheet system
|
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
ETC[ETC]
Advanced Semiconductor Business Inc
|
| 5KP100 5KP100A 5KP10A 5KP6.0 5KP30 5KP6.0A 5KP9.0A |
Ppk=5000W, Vc=162V transient voltage suppressor
5000 Watt Transient Voltage Suppressors 5.0 to 110 Volts 5000 W, UNIDIRECTIONAL, SILICON, TVS DIODE
Contact Gender:Socket; Circular Shell Style:Straight Plug; Insert Arrangement:21-41
|
MCC
Micro Commercial Components, Corp.
Micro Commercial Components Corp.
|
| GP02-20 GP02-25 GP02-30 GP02-35 GP02-40 |
High Voltage Glass Passivated Junction Rectifiers, Forward Current 0.25A, Reverse Voltage 2000 to 4000V
|
Vishay
|
| LF412A LF412ACH LF412ACJ8 LF412ACN8 LF412AMJ8 LF41 |
Dual Precision JFET Input Operational Amplifiers DUAL OP-AMP, 2000 uV OFFSET-MAX, 5.7 MHz BAND WIDTH, MBCY8
Dual Precision JFET Input Operational Amplifiers DUAL OP-AMP, 1650 uV OFFSET-MAX, 5.7 MHz BAND WIDTH, PDIP8
Dual Precision JFET Input Operational Amplifiers DUAL OP-AMP, 5000 uV OFFSET-MAX, 5.5 MHz BAND WIDTH, MBCY8
RES 887 OHM 1/4W 1% 1206 SMD DUAL OP-AMP, 3900 uV OFFSET-MAX, 5.5 MHz BAND WIDTH, MBCY8
RES 665K OHM 1/4W 1% 1206 SMD DUAL OP-AMP, 2000 uV OFFSET-MAX, 5.7 MHz BAND WIDTH, MBCY8
Dual Precision JFET Input Operational Amplifiers DUAL OP-AMP, 3900 uV OFFSET-MAX, 5.5 MHz BAND WIDTH, CDIP8
Dual Precision JFET Input Operational Amplifiers DUAL OP-AMP, 5000 uV OFFSET-MAX, 5.5 MHz BAND WIDTH, CDIP8
Dual Precision JFET Input Operational Amplifiers DUAL OP-AMP, 2000 uV OFFSET-MAX, 5.7 MHz BAND WIDTH, CDIP8
Dual Precision JFET Input Operational Amplifiers DUAL OP-AMP, 1650 uV OFFSET-MAX, 5.7 MHz BAND WIDTH, CDIP8
From old datasheet system
|
Linear Technology, Corp.
Linear Integrated Systems
|
| 5KP64 5KP10 5KP9.0A 5KP7.0A 5KP8.0A 5KP14A |
RES 25 OHM 5% 225W TUBULAR WW
MOSFET N-CH 250V 14A D2PAK 5000 W, UNIDIRECTIONAL, SILICON, TVS DIODE
Unidirectional and bidirectional Transient Voltage Suppressor diodes 5000 W, UNIDIRECTIONAL, SILICON, TVS DIODE
|
SEMIKRON
|
| 2021-25 |
25 W, 24 V, 2000-2130 MHz common base transistor
25 Watts, 24 Volts, Class C Microwave 2000 - 2130 MHz
BJT
2000-2400 MHz, Class C, Common Base; fO (MHz): 2100; P(out) (W): 25; P(in) (W): 5; Gain (dB): 7.5; Vcc (V): 24; Case Style: 55AW-1 S BAND, Si, NPN, RF POWER TRANSISTOR
|
GHz Technology
Microsemi, Corp.
|
| 2SB1236ATV3 2SD1866TV6C 2SD1866TV3C 2SC4016TV2 2SD |
1500 mA, 160 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2000 mA, 70 V, NPN, Si, SMALL SIGNAL TRANSISTOR
500 mA, 32 V, NPN, Si, SMALL SIGNAL TRANSISTOR
5000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR
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