| PART |
Description |
Maker |
| NTE5869 NTE5850 NTE5866 NTE5861 NTE5863 NTE5862 NT |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 400V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 200V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 100V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 50V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 300V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 500V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 800V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 800V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 600V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 600V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 500V. Average forward current 6A.
Silicon Power Rectifier Diode 6 Amp
Silicon Power Rectifier Diode, 6 Amp
Silicon Power Rectifier Diode / 6 Amp
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 400V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 100V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 200V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 300V. Average forward current 6A.
|
NTE[NTE Electronics]
|
| APT30DS60B04 APT30DS60B APT30DS60S APT30DS60SG |
MOSFET
Fast Recovery Epitaxial Diode; Package: D3 [S]; IO (A): 20; VR (V): 600; trr (nsec): 17; VF (V): 3.2; Qrr (nC): 180; 20 A, 600 V, SILICON, RECTIFIER DIODE
2-300V HIGH FREQUENCY SOFT RECOVERY RECTIFIER DIODES IN SERIES
|
Microsemi, Corp.
Advanced Power Technology
|
| BYS459B-1500S BYS459-1500S BYS459F-1500S BYS459-15 |
10 A, 1500 V, SILICON, RECTIFIER DIODE, TO-220AC PLASTIC PACKAGE-2
High Voltage Damper Diodes Reverse Voltage 1500V Forward Current 10A Reverse Recovery Time 220ns
|
Vishay Beyschlag
VISAY[Vishay Siliconix]
|
| 1N4944GP 1N4946GP 1N4947GPE 1N4944GPE/4G 1N4942GP |
1 A, 400 V, SILICON, SIGNAL DIODE, DO-204AL PLASTIC, DO-41, 2 PIN
Diodes
Glass Passivated Junction Fast Switching Rectifier, Forward Current 1.0A, Reverse Voltage 600V
Glass Passivated Junction Fast Switching Rectifier, Forward Current 1.0A, Reverse Voltage 400V
Glass Passivated Junction Fast Switching Rectifier, Forward Current 1.0A, Reverse Voltage 200V
Glass Passivated Junction Fast Switching Rectifier, Forward Current 1.0A, Reverse Voltage 1000V
|
Vishay Beyschlag
|
| 30EPH03 |
300V 30A Ultra-Fast Discrete Diode in a TO-247 (2 LEAD) package
Ultrafast Rectifier
|
IRF[International Rectifier]
|
| 222233860274 222233860103 |
MicroMonitor Chip 电容270NF 300V
CAPACITOR 10NF 300V 电容10NF 300V
|
Vishay Intertechnology, Inc.
|
| 1N2128ASERIES 1N3768 1N1183 1N1183A 1N1184 1N1184A |
35,40,and 60 Amp Power Silicon Rectifier Diodes
35,43 AND POWER SILICON RECTIFIER DIODES
150V 40A Std. Recovery Diode in a DO-203AB (DO-5)package
400V 35A Std. Recovery Diode in a DO-203AB (DO-5)package
400V 60A Std. Recovery Diode in a DO-203AB (DO-5)package
200V 60A Std. Recovery Diode in a DO-203AB (DO-5)package
300V 40A Std. Recovery Diode in a DO-203AB (DO-5)package
150V 60A Std. Recovery Diode in a DO-203AB (DO-5)package
300V 60A Std. Recovery Diode in a DO-203AB (DO-5)package
500V 40A Std. Recovery Diode in a DO-203AB (DO-5)package
600V 35A Std. Recovery Diode in a DO-203AB (DO-5)package
100V 40A Std. Recovery Diode in a DO-203AB (DO-5)package
300V 35A Std. Recovery Diode in a DO-203AB (DO-5)package
500V 35A Std. Recovery Diode in a DO-203AB (DO-5)package
100V 60A Std. Recovery Diode in a DO-203AB (DO-5)package
500V 60A Std. Recovery Diode in a DO-203AB (DO-5)package
|
IRF[International Rectifier]
|
| BAT240A |
Silicon Schottky Diode (Rectifier Schottky diode for modem applications High reverse voltage For power supply)
|
SIEMENS A G
SIMENS
Siemens Semiconductor Group
|
| Q62702-A1234 |
Silicon Schottky Diode (Rectifier Schottky diode for modem applications High reverse voltage For power supply)
|
SIEMENS[Siemens Semiconductor Group]
|
| CR80-040 CR150-100 CR80-020LEADFREE CENTRALSEMICON |
2.5V to 5.5V, 230µA Dual Rail-to-Rail Voltage Output 10-Bit DAC with Parallel Interface in 24-lead TSSOP 80 A, 400 V, SILICON, RECTIFIER DIODE, DO-5
150 A, 1000 V, SILICON, RECTIFIER DIODE, DO-8
80 A, 200 V, SILICON, RECTIFIER DIODE, DO-5
60 A, 200 V, SILICON, RECTIFIER DIODE, DO-5
60 A, 600 V, SILICON, RECTIFIER DIODE, DO-5
60 A, 800 V, SILICON, RECTIFIER DIODE, DO-5
60 A, 400 V, SILICON, RECTIFIER DIODE, DO-5
60 A, 1200 V, SILICON, RECTIFIER DIODE, DO-5
True Bipolar Input, Dual 12-Bit, 2-Channel, Simultaneous Sampling SAR ADC; Package: TSSOP; No of Pins: 24; Temperature Range: Industrial
80 A, 800 V, SILICON, RECTIFIER DIODE, DO-5
|
Central Semiconductor, Corp.
CENTRAL SEMICONDUCTOR CORP
|
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