| PART |
Description |
Maker |
| 2SC5384 |
125mW SMD NPN transistor, maximum rating: 25V Vceo, 30mA Ic, 35 to 180 hFE.
Transistor For High Frequency Amplify, Medium Frequency Amplify Application Silicon NPN Epitaxial Type Ultra Super Mini
|
Isahaya Electronics Corporation
|
| 2SK43310 |
FOR LOW FREQUENCY AMPLIFY APPLICATION N CHANNEL JUNCTION TYPE
|
Isahaya Electronics Corporation
Isahaya Electronics Corpora...
|
| INC5001AP1 |
For low frequency power amplify Silicon NPN Epitaxial
|
Isahaya Electronics Corporation
|
| 2SC3355 2SC3355-T |
For amplify low noise and high frequency
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
|
NEC[NEC]
|
| 2SC5214 |
For Low Frequency Amplify Application Silicon Npn Epitaxial Type
|
Isahaya Electronics Corporation
|
| INA6006AS1 |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE
|
Isahaya Electronics Cor...
|
| 2SC3928A-11 |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
|
Isahaya Electronics Cor...
|
| 2SD1447 |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
|
Isahaya Electronics Corporation
Panasonic Semiconductor
|
| 2SC5817 2SC5814 2SC5815 2SC5816 |
For Low Frequency Amplify Application Silicon NPN Epitaxial Type
|
ISAHAYA[Isahaya Electronics Corporation]
|
| 2SC5482 2SC548212 |
For Low Frequency Power Amplify Application Silicon NPN Epitaxial Type Micro
|
Isahaya Electronics Corporation
|
